一种改进的磁控型忆阻器电路模型及其在MC振荡电路中的应用

发布时间：2018-08-12 11:28

【摘要】：忆阻器是一类有记忆特性的非线性电阻,但因其对制备环境和技术要求严格,导致忆阻器实物短期内仍不能走出实验室,所以设计可以替代忆阻器的电路模型是一个重要的研究方向。现有忆阻器电路模型存在设计复杂、实现困难以及对忆阻器性质不能准确模拟的缺陷,导致许多关于忆阻器的应用研究难以广泛开展,忆阻器电路模型的研究对于现阶段忆阻器应用的研究具有重要意义。本文的目的是分析现有磁控型忆阻器电路模型的缺陷,提出并硬件实现一种改进的磁控型忆阻器电路模型,最后,设计一种MC振荡电路,使用该电路模型验证其性能。本文首先围绕磁控型忆阻器电路模型进行研究,介绍了忆阻器电路模型的研究现状,总结了各种电路模型的优缺点,重点从工作原理和电路实现两个方面分析了现有磁控型忆阻器电路模型的缺陷,即磁控型忆阻器的电路模型在电路磁通的计算上普遍忽略了电路的初始状态和输入激励的初始状态,计算的磁通量有误,导致在该原理指导下的电路设计也普遍存在缺陷,问题主要集中在积分电路的设计上。根据对现有磁控型忆阻器电路模型的设计原理分析和仿真验证,发现其积分器会忽略电路中的直流分量,且不能有效存储积分得出的磁通信息,导致在仿真实验中,表现出了其电压电流特性与理论的理想忆阻器电压电流特性不符。这种电路模型存在的缺陷可能导致其在代替忆阻器应用于研究过程中得出错误的结论,所以分析出其不足所在和设计仿真实验证明其缺陷,对忆阻器电路模型的测试和改进提供了一种思路。在分析了现有磁控型忆阻器电路模型的不足的基础上,本文对电路模型积分部分的改进提出了两种方案:基于模拟电路的积分方案和基于数字电路的积分方案。在论证了理论和实现可行性的基础上选择了数字积分的方案,并进行了硬件实现,最后设计了测试实验,将结果与忆阻器理论结果对比,验证了其正确性。最后,本文对基于磁控型忆阻器的MC振荡电路进行研究。首先,本文设计了一种忆阻器精确控制电路,利用比较电路构成反馈回路,避免了传统方法中反复写入读取的繁琐步骤,提高了控制效率和精度。然后,设计了一种MC振荡电路克服了RC振荡器频率调节精度差、需手动调节的不足,原理上可以实现高精度、程序化的频率控制。最后,通过仿真验证,证明了该方法的可行性,并分析了电路特性。
[Abstract]:The memory resistor is a kind of nonlinear resistor with memory characteristics. However, because of its strict requirements on the preparation environment and technology, the memory resistor can not walk out of the laboratory in a short period of time. So it is an important research direction to design the circuit model which can replace the resistive device. The current circuit model of the resistive device is complex in design, difficult in implementation and unable to simulate exactly the properties of the resistor, which makes it difficult to carry out a lot of research on the application of the resistive device. The research of the circuit model of the resistor is of great significance to the research of the application of the resistor at the present stage. The purpose of this paper is to analyze the defects of the current circuit models of magnetically controlled amnesia, and to implement an improved circuit model of magnetically controlled memristor in hardware. Finally, a MC oscillating circuit is designed, and its performance is verified by using the circuit model. Firstly, this paper studies the circuit model of magnetically controlled memristor, introduces the research status of the circuit model, summarizes the advantages and disadvantages of various circuit models. The defects of the current circuit model of magnetically controlled resistor are analyzed from the aspects of working principle and circuit realization. In other words, the circuit model of the magnetic-controlled resistor generally ignores the initial state of the circuit and the initial state of the input excitation in the calculation of the circuit flux, and the calculation of the magnetic flux is incorrect, which leads to the defect of the circuit design under the guidance of the principle. The problem is mainly focused on the design of integral circuit. According to the analysis of the design principle of the current circuit model of magnetically controlled amnesia and the simulation verification, it is found that the integrator will ignore the DC component of the circuit and can not store the flux information from the integration effectively, which leads to the simulation experiment. It is shown that the voltage and current characteristics are not consistent with the theoretical ideal resistor voltage and current characteristics. The defects of this kind of circuit model may lead to the wrong conclusion in the process of replacing the amnesia in the research process. Therefore, the deficiency of the circuit model is analyzed and its defects are proved by the design of simulation experiments. A train of thought is provided for the test and improvement of the circuit model of the resistor. Based on the analysis of the shortcomings of the current circuit models of magnetically controlled amnesia, this paper proposes two schemes to improve the integration of the circuit model: the integration scheme based on analog circuit and the integration scheme based on digital circuit. On the basis of demonstrating the feasibility of the theory and realization, the scheme of digital integration is selected, and the hardware implementation is carried out. Finally, the test experiment is designed, and the results are compared with the theoretical results of the resistor to verify its correctness. Finally, the MC oscillating circuit based on magnetically controlled amnesia is studied in this paper. Firstly, this paper designs an accurate control circuit of amnesia, which uses the comparison circuit to form a feedback loop, avoids the tedious steps of repeatedly writing and reading in the traditional method, and improves the control efficiency and precision. Then, a MC oscillating circuit is designed to overcome the low precision of frequency regulation of RC oscillator, which needs manual regulation. In principle, it can realize high precision and programmed frequency control. Finally, the feasibility of the method is proved by simulation, and the circuit characteristics are analyzed.
【学位授予单位】：国防科学技术大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TN752;TM501

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