导电CIGS靶材的制备研究
发布时间：2018-08-21 08:19
【摘要】：随着人类社会的快速进步，能源危机变得更加地严重，太阳能是可再生的能源，受到人们的普遍关注，各国都在大力研发太阳能电池，CIGS薄膜太阳能电池以其优异的综合性能被认为是最有前景的第三代太阳能电池。为降低其生产成本，单靶溅射技术被开发出来，目前，单靶的电阻率太大，只能用于射频溅射，这很大程度上限制了CIGS电池的工业化生产。本文就制备导电性良好的单靶进行了探索。 本实验以高纯的铜、铟、镓和硒为原料，用石英管真空密封真空密封，制备出单相的Cu2Se、In2Se3、Ga2Se3和CuIn0.7Ga0.3Se2等化合物粉末。并测试了这些化合物在室温时，25MPa压强下的电阻率。300℃保温3小时可合成单相Cu2Se，电阻率为0.022Ω cm；650℃保温3小时可合成单相In2Se3，电阻率为4.2Ω cm；885℃保温12小时可合成单相的Ga2Se3，电阻率为1.03*107Ω cm；1000℃保温3小时可合成单相的CuIn0.7Ga0.3Se2，电阻率为379.5Ω cm。 实验用不同温度制备的CIGS粉末和Cu2Se、In2Se3、Ga2Se3按化学计量比配制的混合粉末，运用SPS烧结技术制备靶材，探讨烧结温度、保温时间、烧结压力和烧结气氛对CIGS靶材致密度和电阻率的影响。结果发现，烧结压力不变时，升高烧结温度和延长保温时间，靶材致密度和电阻率都升高。烧结温度和保温时间不变时，压力增大，靶材致密度升高，电阻率下降；真空气氛烧结的靶材性能优于氩气保护下的靶材。 以650℃真空化合制备的CIGS粉末为原料，运用SPS烧结技术(温度为600℃，保温5分钟，真空条件下，烧结压强为30MPa)得到靶材致密度为97.83%，，电阻率为52.1Ω cm，烧结温度为850℃，其他条件不变时，致密度达98.97%。以Cu2Se、In2Se3、Ga2Se3按化学计量比配制的混合粉末为原料，烧结压力为25MPa，温度为600℃，得到靶材的致密度为96.68%，电阻率为7.1Ω cm。XRD、SEM及EDS分析显示靶材都以CuIn0.7Ga0.3Se2为主体相。
[Abstract]:With the rapid progress of human society, the energy crisis has become more serious. Solar energy is a renewable energy, which has received widespread attention. CIGS thin film solar cells are the most promising solar cells for their excellent comprehensive performance. In order to reduce the production cost, single target sputtering technology has been developed. At present, the resistivity of single target is too large and can only be used in RF sputtering, which limits the industrial production of CIGS battery to a great extent. In this paper, the preparation of a single target with good conductivity is explored. In this experiment, single phase Cu _ 2SeN _ (2) in _ (2) S _ (2) E _ (3) Ga _ (2) S _ (3) and CuIn0.7Ga0.3Se2 powders were prepared by using high purity copper, indium, gallium and selenium as raw materials and sealed by quartz tube. The resistivity of these compounds was measured at room temperature at 25 MPA for 3 hours. The resistivity was 0.022 惟 cm ~ (-1) and the resistivity was 4.2 惟 路cm ~ (3). The resistivity was 0.022 惟 cm ~ (-1) and 650 鈩
本文编号：2195115
[Abstract]:With the rapid progress of human society, the energy crisis has become more serious. Solar energy is a renewable energy, which has received widespread attention. CIGS thin film solar cells are the most promising solar cells for their excellent comprehensive performance. In order to reduce the production cost, single target sputtering technology has been developed. At present, the resistivity of single target is too large and can only be used in RF sputtering, which limits the industrial production of CIGS battery to a great extent. In this paper, the preparation of a single target with good conductivity is explored. In this experiment, single phase Cu _ 2SeN _ (2) in _ (2) S _ (2) E _ (3) Ga _ (2) S _ (3) and CuIn0.7Ga0.3Se2 powders were prepared by using high purity copper, indium, gallium and selenium as raw materials and sealed by quartz tube. The resistivity of these compounds was measured at room temperature at 25 MPA for 3 hours. The resistivity was 0.022 惟 cm ~ (-1) and the resistivity was 4.2 惟 路cm ~ (3). The resistivity was 0.022 惟 cm ~ (-1) and 650 鈩
本文编号：2195115
本文链接：https://www.wllwen.com/kejilunwen/dianlilw/2195115.html
