190GHz三倍频器研究

发布时间：2017-12-26 21:43

本文关键词：190GHz三倍频器研究　出处：《电子科技大学》2016年硕士论文　论文类型：学位论文

【摘要】：太赫兹技术在电子对抗、宽带通信、医学成像、天文学和安全监测等诸多领域都有重要的作用。目前,太赫兹系统的发展主要受限于缺少高灵敏探测器和有效的辐射源,因此,太赫兹频率源的研究是重要课题之一。产生太赫兹辐射源的方法有很多,其中固态太赫兹辐射源以半导体技术为支撑,凭借室温工作环境、连续波、频谱纯度高、结构较简单、体积小、成本低及可靠性高等优势,在太赫兹领域发挥着重要作用。本课题针对太赫兹倍频器进行研究,在深入理解及掌握倍频器原理的基础上,主要针对190GHz三倍频器进行研究。电路以厚度为50um的石英作为衬底,采用多种太赫兹肖特基二极管作为核心部件,基于反向并联和同向并联结构等不同方法来实现。论文结合HFSS有限元法和ADS谐波平衡法进行联合仿真,分别优化输入输出探针过渡、输入CMRC低通滤波器、输入输出匹配网络、直流偏置电路及整体电路,以实现更高的输出功率和倍频效率。实验研究显示,基于DBES105a二极管同向并联结构的190GHz三倍频器,180-210GHz范围内倍频效率大于1.3%,最大倍频效率为1.64%,最大输出功率为1mW;基于DBES105a二极管反向并联结构的190GHz三倍频器,159-177GHz范围内倍频效率大于0.6%,最大倍频效率为1.29%,最大输出功率为0.95mW;基于中电13所阻性管结构的190GHz三倍频器,165-210GHz范围内倍频效率大于0.6%,最大倍频效率为1%,最大输出功率为0.057mW;基于RAL容性管结构的190GHz三倍频器仿真结果显示,186-192GHz范围内倍频效率超过15%,最大倍频效率为25%,最大输出功率为20mW。本课题为某预研项目中的380GHz分谐波混频器提供本振驱动源,并为后续研究太赫兹更高频段的倍频器和单片集成电路奠定基础。
[Abstract]:Terahertz technology plays an important role in many fields, such as electronic countermeasures, broadband communication, medical imaging, astronomy and safety monitoring. At present, the development of terahertz system is mainly restricted by the lack of highly sensitive detectors and effective radiation sources. Therefore, the research of terahertz frequency source is one of the important topics. There are many methods of terahertz radiation source, wherein a solid terahertz radiation source in semiconductor technology, with room temperature environment, continuous wave, high spectral purity, simple structure, small volume, low cost and high reliability advantages, plays an important role in the field of terahertz. This subject is aimed at the research of terahertz frequency doubler. On the basis of understanding and mastering the principle of frequency doubler, 190GHz three frequency doubler is mainly studied. The circuit is made of quartz with a thickness of 50um, and a variety of terahertz Schottky diodes are used as the core components. The paper combines HFSS finite element method and ADS harmonic balance method to carry out co simulation, optimizing input and output probe transition, input CMRC low pass filter, input and output matching network, DC bias circuit and the whole circuit respectively, so as to achieve higher output power and frequency doubling efficiency. The experimental research shows that the DBES105a diode is parallel with the structure of the 190GHz three frequency multiplier based on the range of 180-210GHz frequency doubling efficiency is greater than 1.3%, the maximum conversion efficiency is 1.64%, the maximum output power is 1mW; DBES105a diode reverse parallel structure 190GHz three multiplier based on the range of 159-177GHz frequency doubling efficiency is greater than 0.6%, the maximum conversion efficiency is 1.29%, the maximum the output power of 0.95mW; 13 in electrical resistance tube structure 190GHz three frequency multiplier based on the range of 165-210GHz frequency doubling efficiency is greater than 0.6%, the maximum conversion efficiency is 1%, the maximum output power of 0.057mW; RAL capacitive tube structure 190GHz three frequency multiplier based simulation results show that the range of 186-192GHz frequency doubling efficiency of more than 15%, the maximum the SHG efficiency is 25%, the maximum output power is 20mW. This project provides a local oscillator driver for a 380GHz sub harmonic mixer in a pre research project, and lays the foundation for subsequent research of THz and higher frequency doublers and monolithic integrated circuits.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN771

【参考文献】