一种高性能IGBT驱动电路设计

发布时间：2018-01-07 12:00

本文关键词：一种高性能IGBT驱动电路设计　出处：《电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：作为电力电子领域新一代的主流产品,IGBT的应用涉及到国民经济的各个部门,是节约能源,发展低碳经济的关键支撑技术之一,它具有输入阻抗高、导通压降低、峰值电流容量大等优点。其驱动与保护电路作为IGBT应用中的关键技术之一,是保证IGBT高效、可靠运行的必要条件,所以设计一款性能优异的IGBT驱动保护电路是十分必要的。本课题基于1μm 600 V BCD工艺平台,研究设计了一种用于600 V的IGBT驱动保护电路,电路采用半桥结构,可广泛应用于PWM电机控制、DC-AC逆变等领域中。电路设计具体指标包括:芯片高低端电源输入为14 V到18 V,高端最高浮动偏置电压为600 V,能够提供峰值为1 A和-2 A的栅极驱动电流,同时芯片集成了欠压锁定,过温保护等功能,能够兼容3.3 V及5 V TTL逻辑控制信号。在电路设计过程中,首先通过对常见的IGBT驱动电路的拓扑结构、驱动原理与应用的分析,确定了电路的总体结构与设计性能指标;然后开始对电路中的各子模块电路进行分析设计,本文详细地对以下模块:输入逻辑控制电路、窄脉宽拓展电路、5 V电源转换电路、电流基准电路及欠压锁定电路进行了原理分析与设计,利用仿真软件Hspice对电路中各个子电路模块进行了仿真分析与验证,并根据仿真结果优化电路性能。最后,作者简要介绍了驱动电路中其余子模块电路的功能与仿真结果,根据各子电路的功能,详细地分析了本课题驱动保护电路的工作原理,同时利用仿真软件Hspice对设计的IGBT驱动电路低端控制驱动电路进行了仿真分析,验证电路指标。
[Abstract]:As the field of power electronics and a new generation of mainstream products, the application of IGBT involves all sectors of the national economy, is one of the key supporting technologies of energy conservation, the development of low carbon economy, it has a high input impedance, conduction voltage, peak current has the advantages of large capacity. The drive and protection circuit is one of the key technologies in IGBT in the application of IGBT is to ensure efficient and reliable operation of the necessary conditions, so the design of a high performance IGBT drive protection circuit is necessary. In this paper 1 m 600 V platform based on BCD technology, design a kind of driving circuit for 600 V IGBT circuit with half bridge structure, can be widely the application of PWM in motor control, DC-AC inverter field. Specific circuit design indicators include: high and low power chip input of 14 V to 18 V, the highest high-end floating bias voltage is 600 V, can provide a peak value of 1 A and -2 A The gate drive current at the same time, the chip integrates undervoltage lockout, over temperature protection and other functions, can be compatible with 3.3 V and 5 V TTL logic control signal. The circuit design process, first through the drive circuit structure of common IGBT, analysis of driving principle and application, to determine the overall structure and the design of circuit performance then start index; the analysis and design of each sub module circuit, this paper on the following modules: the logic control circuit input, narrow pulse width expansion circuit, 5 V power conversion circuit, current reference circuit and undervoltage lockout circuit is analyzed and the design principle of each sub module circuit in the circuit the analysis and verification of simulation using simulation software Hspice, and according to the simulation results of circuit optimization performance. Finally, the author briefly introduces the driving circuit of the fruit function and simulation node sub module circuit, according to the sub The function of the circuit is analyzed in detail. The working principle of the drive and protection circuit is analyzed in detail. At the same time, the low level control drive circuit of the IGBT drive circuit is simulated and analyzed by using the simulation software Hspice, and the circuit index is verified.

【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8

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