硅氧碳纳米镶嵌复合薄膜的氧空位形成与散热基板封装

发布时间：2018-01-14 04:24

本文关键词：硅氧碳纳米镶嵌复合薄膜的氧空位形成与散热基板封装　出处：《功能材料》2017年06期 　论文类型：期刊论文

【摘要】：自支撑硅氧碳纳米镶嵌复合薄膜具有细小等轴β-SiC纳米晶弥散分布在非晶态相SiO_xC_y和游离碳基体的复合结构。利用电子顺磁共振谱(EPR)仪对900~1 200℃终烧薄膜复合结构中的氧空位形成进行分析;采用丝网印刷法在薄膜表面获得两条平行高温银浆电路层,并以其为散热基板进行LED器件板上芯片封装(COB)。通过扫描电镜(SEM)与光学显微镜对薄膜微观形貌及封装结构进行观察,并通过LED热光参数测试仪对其结温进行探究。结果表明,终烧温度升高,薄膜氧空位浓度增大,g因子接近自由电子值2.0023。高温银浆导电层均匀致密保证良好电导效果。1 200℃终烧薄膜作为散热基板具有较好热传导与绝缘特性,其封装LED结温约为33.7℃,低于120℃限制,有望规模应用于大功率LED器件领域。
[Abstract]:Self supporting silicon oxygen and carbon nano composite films with fine equiaxed beta -SiC nanocrystals dispersed in the composite structure of the amorphous phase SiO_xC_y and free carbon matrix. By using electron paramagnetic resonance (EPR) instrument on the 200 c 900~1 end to burn oxygen vacancies in the complex structure formation; using screen printing method two parallel high temperature Silver paste circuit layer on the surface of the films, and chip LED devices on board package with its substrate (COB). By scanning electron microscopy (SEM) and optical microscopy on film morphology and encapsulation structure were observed, and through the junction temperature of LED thermo parameter tester. The results show that the inquiry finally, burning temperature, film oxygen vacancy concentration increases, the g factor is close to the free electron value of 2.0023. high temperature Silver conductive layer is uniform and compact to ensure good conductivity effect of 200 c.1 final sintering film as substrate has better heat transfer The guide and insulation characteristics, the encapsulation of LED junction of about 33.7 DEG C below 120 DEG C, is expected to scale used in the field of high power LED devices.

【作者单位】：厦门大学材料学院;福建省特种先进材料重点实验室(厦门大学);厦门大学深圳研究院;
【基金】：国家自然科学基金资助项目(51302237) 福建省高校产学合作资助项目(2016H6021) 深圳市知识创新计划资助项目(JCYJ20130329150151156) 厦门大学大学生创新创业训练计划资助项目(201610384178)
【分类号】：TB383.2;TN312.8
【正文快照】： 点,但也需制作电绝缘层而导致热界面。因此,开发具0　引　言有复合结构的高导热高绝缘单层散热材料成为研究热LED作为第四代光源,具有体积小、亮度高、寿命点。长、低能耗、无污染、安全电压低及响应时间短等优良针对散热和热失配问题,实验室先前工作采用先特性,已得到广泛应

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