共振隧穿二极管材料生长和优化设计研究

发布时间：2018-01-29 02:59

本文关键词： 共振隧穿二极管磷化铟氮化镓金属有机化学气相淀积　出处：《天津工业大学》2017年硕士论文　论文类型：学位论文

【摘要】：共振隧穿二极管(Resonant Tunneling Diode,RTD)作为一种新型高速两端负阻纳米器件,基于量子隧穿机制,具有量子效应,使RTD有着其它电子器件无法比拟的优点,即具有高频高速、低压低功耗、负阻、双稳态及自锁的特性。RTD不仅可以应用在模拟电路领域,如可以作为高频振荡器产生太赫兹辐射波源,还可以应用到数字电路领域,能够实现复杂的逻辑单元。所以,获得良好的RTD器件性能,具有里程碑意义。本论文主要结合太赫兹波段无限应用前景以及RTD可作为太赫兹辐射波源的重要发展趋势,并针对RTD发展中的关键问题,开展了对RTD的结构设计与优化和外延材料生长等方面的研究,其主要工作如下:1、共振隧穿二极管的结构设计与优化:在共振隧穿理论研究的基础上,设计和优化了以InP为衬底的RTD的外延材料结构,通过控制In组份获得较高振荡频率和输出功率,提高RTD的电流峰谷比,达到较高的10.33:1的结果。2、共振隧穿二极管外延材料结构生长和测试分析:使用金属有机化学气相淀积(Metal Organic Chemical Vapor Deposition,MOCVD)技术对以 InP 为衬底的RTD外延材料结构进行生长,然后利用扫描电子显微镜(Scan Electron Microscope,SEM)、和 X 射线衍射(X-ray Diffraction,XRD)对外延材料进行表征测试,获得较好的RTD结构外延片。3、开发利用高性能的新材料体系,进行GaN基RTD结构设计、模拟和仿真,获得较好负微分电阻效应,峰谷电流比可达到4.6:1,并且得到了较小的峰值电压,为VP=0.2V。本论文深入研究太赫兹波段RTD器件的外延材料体系及结构参数、制备过程以及新型半导体材料的RTD优化设计,不断提高RTD器件的性能。为以后对RTD的进一步相关研究奠定了坚实的基础。
[Abstract]:Resonance tunneling diode (Resonant Tunneling Diodet) is a novel high speed negative resistive nanodevice with quantum effect based on quantum tunneling mechanism. RTD has many advantages, such as high frequency, high speed, low power consumption, negative resistance, bistability and self-locking, which can not only be used in analog circuits. If it can be used as a terahertz wave source for high-frequency oscillator, it can also be applied to the digital circuit field, and can realize complex logic unit. Therefore, good performance of RTD devices can be obtained. This paper mainly combines the infinite application prospect of terahertz band and the important development trend of RTD as terahertz radiation source, and aims at the key problems in the development of RTD. The structural design and optimization of RTD and the growth of epitaxial materials are studied. The main work is as follows: 1. The structure design and optimization of resonant tunneling diode: based on the theory of resonant tunneling. The epitaxial structure of RTD on InP substrate is designed and optimized. By controlling the in component, the high oscillation frequency and output power are obtained, and the current peak to valley ratio of RTD is improved. Reached the higher 10.33: 1 result of .2. Structural growth and testing Analysis of resonant tunneling Diode Epitaxial Materials: using Metalloorganic Chemical Vapor deposition (. Metal Organic Chemical Vapor Deposition. The structure of RTD epitaxial material on InP substrate was grown by MOCVD technique, and then scanning electron microscope (SEM) was used to fabricate the structure of RTD epitaxial material. The epitaxial materials were characterized by SEMX and X-ray diffraction X-ray diffraction (XRD), and a good RTD structure epitaxial wafer was obtained. A new material system with high performance is developed to design, simulate and simulate the GaN based RTD structure. A good negative differential resistance effect is obtained. The peak to valley current ratio can reach 4.6: 1. A smaller peak voltage of 0.2 V is obtained. The epitaxial material system and structure parameters of terahertz band RTD devices are studied in this paper. The preparation process and the RTD optimization design of new semiconductor materials continuously improve the performance of RTD devices and lay a solid foundation for further related research on RTD in the future.
【学位授予单位】：天津工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN31

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