混合量子点QLED结构性能研究

发布时间：2018-01-30 20:32

本文关键词： 量子点发光二极管双能量陷阱载流子注入平衡　出处：《发光学报》2017年08期 　论文类型：期刊论文

【摘要】：为研究基于混合量子点的QLED结构与性能,利用红光量子点以及绿光量子点两种材料制备了橙光QLED器件,并对其性能进行了表征。实验制备的器件结构为ITO/PEDOT∶PSS/poly-TPD/混合QDs/Zn O/Al,其中发光层采用了3种混合量子点的混合结构方案。方案一先旋涂红光量子点层,后旋涂绿光量子点层;方案二先旋涂绿光量子点层,后旋涂红光量子点层;方案三将红光、绿光量子点1∶1混合后制备为发光层。实验结果表明:方案一制备的器件电流密度最大,发光亮度最低,且只有红光谱;方案二制备的器件具有最小的电流密度,同时具有红、绿光谱,在8 V电压下,电流效率约为4.69 cd/A;方案三制备的器件同时具有红、绿光谱,电流密度与发光特性介于方案一与方案二之间。实测数据与理论分析是一致的,方案二制备的器件存在双能量陷阱,能够将注入的空穴以及电子同时限制在红光量子点层内。通过调节各功能层厚度使得载流子注入平衡,可进一步增大发光电流,提高器件效率。
[Abstract]:To study the structure and properties of QLED based on hybrid quantum dots, orange light QLED device prepared by red light quantum dots and quantum dots of two kinds of green materials, and its properties were characterized. The device structure of the prepared ITO/PEDOT: PSS/poly-TPD/ hybrid QDs/Zn O/Al, wherein the light-emitting layer adopts a hybrid structure scheme of 3 hybrid quantum dots. A first spin quantum dot layer after the red light, green light quantum point spin coating layer; two first spin quantum dot layer after the green light, red light quantum point spin coating layer; three the red light, green light quantum point 1: 1 mixture preparation for light emitting layer. The experimental results show that: the maximum current density device scheme of preparation, the brightness of the lowest, and only the red spectrum; two solutions prepared with the current density of the smallest, with red, green spectrum, under the voltage of 8 V, the current efficiency is about 4.69 cd/A devices with three scheme; Has red, green light spectrum, and Photoluminescence Characteristics of the current density between the scheme and scheme two. Between the measured data and theoretical analysis is consistent with the solutions prepared two double energy trap can be injected holes and at the same time limit in the red electron quantum dot layer. Through adjusting the thickness of the function the carrier injection balance, can further increase the emitting current, improve the efficiency of the device.

【作者单位】：北京信息科技大学自动化学院;北京交通大学电子信息工程学院;
【基金】：国家重点基础研究发展计划(973)(2015CB654605)资助项目~~
【分类号】：TN304;TN312.8
【正文快照】： 1引言量子点作为一种无机半导体材料,具有色纯度高、稳定性好等特点[1-3]。以量子点作为发光层制备的量子点发光二极管(Quantum dot light emitting di-ode,QLED)具有光谱连续可调、量子效率高等特点[4-5]。自从1994年利用量子点作为发光材料第一次被提出,量子点显示器件研究

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