强THz场下GaAs和InSb中瞬态谷间散射和碰撞电离（英文）

发布时间：2018-02-11 11:08

本文关键词： THz波载流子动力学系宗蒙特卡罗谷间散射碰撞电离　出处：《红外与毫米波学报》2017年05期 　论文类型：期刊论文

【摘要】：运用系宗蒙特卡罗法计算了强THz场作用下,n型掺杂的GaAs和InSb中随时间变化的散射机制以及载流子非线性动力学演变,获取了电子散射至卫星谷并弛豫回原能谷的时间信息,并追踪描绘了载流子瞬态增加的过程,结果同时显示了强场作用下谷间散射是GaAs中的主要散射机制,而碰撞电离则是InSb中的关键因素.此外进一步讨论了这两种机制对于相关物理量:平均动能、平均速度、材料的电导率的影响,结果说明这两种机制导致了非线性效应并在两种材料中起到相反的作用,InSb中碰撞电离的响应时间比GaAs中谷间散射的响应时间更长.该研究结果在THz调制领域有一定的指导意义.
[Abstract]:The time-dependent scattering mechanism and the nonlinear dynamical evolution of carriers in n-doped GaAs and InSb under strong THz field are calculated by means of the system Monte Carlo method. The time information of electron scattering to the satellite valley and relaxation back to the original energy valley is obtained. The transient increase of carriers is traced and described. The results show that intervalley scattering is the main scattering mechanism in GaAs. Collision ionization is a key factor in InSb. Furthermore, the effects of these two mechanisms on the relative physical quantities: average kinetic energy, average velocity, conductivity of materials are discussed. The results show that the response time of collision ionization in InSb is longer than that of intervalley scattering in GaAs. The results show that these two mechanisms lead to nonlinear effects and play a contrary role in the two materials. The results have some guiding significance in the field of THz modulation.
【作者单位】：华中科技大学武汉光电国家实验室(筹)光学与电子信息学院;湖北工业大学太阳能高效利用湖北省协同创新中心理学院;
【基金】：Supported by the National Natural Science Foundation of China(11574105,61475054,61405063,61177095) the Hubei Science and Technology Agency Project(2015BCE052) the Fundamental Research Funds for the Central Universities(2017KFYXJJ029) the Open Foundation of Hubei Collaborative Innovation Center for High-efficient Utilization of Solar Energy(HBSKFMS2014007)
【分类号】：TN304

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