Ku波段GaN E类功率放大器设计技术研究

发布时间：2018-02-20 04:06

本文关键词： 功率放大器 GaN E类 Ku波段开关型内匹配　出处：《电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：信息产业的快速发展对功率放大器的尺寸频率带宽都提出了更高的要求,GaN材料具有禁带宽度大、热导率高、临界击穿电场高和饱和电子速度高等优势,使得GaN HEMT具有输出功率密度大、击穿电压高、输入/输出阻抗高等特点,在高频、高温、高效率、宽带大功率器件应用方面具有广阔的前景。E类功率放大器是开关类放大器的一种,理想效率可达100%。在射频频率低端,E类功放有着比其他类型功放更高的效率和更好的线性度。但是,由于E类功放对晶体管本身的寄生参数的特殊要求,通常情况下,E类功放都无法在较高频率下工作。随着半导体技术的发展,E类功率放大器在越来越高的频率得到了实现。由于通信、航空航天等方面对功耗的要求越来越高,E类功率放大器在更高频率下的实现成为了研究的热点。本文对GaN E类功率放大器的高效率宽频带特性以及内匹配的实现方法进行了研究。前期工作中针对GaN HEMT器件寄生电容较大的特点,采用馈电网络的补偿微带线减小寄生参数的影响,实现了400μm栅宽GaN E类功率放大器设计,实测结果在13.7~14.2 GHz输出功率大于30dBm,小信号增益大于7dB,漏极效率大于40%。在此基础上,为实现大功率输出及器件的小型化,采用2.4mm栅宽GaN HEMT设计了4路功率合成的内匹配功率放大器。仿真结果表明,该功率放大器在输入功率39dBm的情况下,在13.7~14.2 GHz频率范围内功率附加效率大于43%,输出功率大于45dBm。峰值PAE达44%,最大输出功率大于40W,功率密度大于4W/mm。该放大器在内匹配工艺上实现,利用键合金丝的电感效应及高介电常数基板的电容效应作电路匹配,使得功放整体的尺寸达到了17.2mm×22mm,满足了小型化的要求。
[Abstract]:With the rapid development of information industry, the size and frequency bandwidth of power amplifiers are required to be higher. Gan materials have the advantages of large bandgap, high thermal conductivity, high critical breakdown electric field and high saturated electron velocity. GaN HEMT has the characteristics of high output power density, high breakdown voltage, high input / output impedance, and high efficiency in high frequency, high temperature and high efficiency. The application of wideband high-power devices has a broad prospect. Class E power amplifier is a kind of switching amplifier. At the low end of the RF frequency, the class E amplifier has higher efficiency and better linearity than any other type of amplifier. However, because of the special requirements of the class E amplifier for the parasitic parameters of the transistor itself, Generally speaking, class E power amplifiers cannot work at higher frequencies. With the development of semiconductor technology, class E power amplifiers are realized at higher and higher frequencies. The realization of class E power amplifier in higher frequency has become a hot topic in the field of aerospace and other aspects. In this paper, the high efficiency and broadband characteristics of GaN class E power amplifier and the realization of internal matching are discussed. Methods: in the previous work, the parasitic capacitance of GaN HEMT devices is large. The compensation microstrip line of feed network is used to reduce the influence of parasitic parameters, and a 400 渭 m gate width GaN E power amplifier is designed. The measured results show that the output power is more than 30 dBm, the small signal gain is more than 7 dB, and the drain efficiency is more than 40 dB at 13.7N 14.2 GHz. In order to realize the high power output and the miniaturization of the device, an internal matched power amplifier with 2.4 mm gate width GaN HEMT is designed. The simulation results show that the power amplifier is in the condition of the input power of 39dBm. In the frequency range of 13.7V 14.2 GHz, the additional power efficiency is greater than 43dBm, the output power is more than 45dBm. the peak PAE is 44W, the maximum output power is more than 40W, and the power density is more than 4W / mmm. the amplifier is realized in the matching process. By using the inductance effect of bond alloy wire and the capacitance effect of high dielectric constant substrate as circuit matching, the overall size of power amplifier is up to 17.2 mm 脳 22mm, which meets the requirement of miniaturization.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75

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