漏极注入HPM对高电子迁移率晶体管的损伤机理

发布时间：2018-02-25 00:16

本文关键词： 高功率微波高电子迁移率晶体管损伤机理漏极失效分析　出处：《中国空间科学技术》2017年03期 　论文类型：期刊论文

【摘要】：针对典型GaAs高电子迁移率晶体管(HEMT)低噪声放大器,利用半导体仿真软件Sentaurus-TCAD建立了HEMT低噪声放大器二维电热模型,考虑高电场下的载流子迁移率退化和载流子雪崩产生效应,分析了由漏极注入高功率微波(HPM)情况下器件内部的瞬态响应,通过分析器件内部电场强度、电流密度、温度分布随信号作用时间的变化,研究了其损伤效应与机理。研究结果表明,当漏极注入幅值17.5V、频率为14.9GHz的微波信号后,峰值温度随信号作用时间的变化呈现周期性"增加—减小—增加"的规律。在正半周期降温,在负半周期升温,总体呈上升趋势,正半周电场峰值主要出现在漏极,负半周电场峰值主要出现在栅极靠漏侧,端电流在第二周期之后出现明显的双峰现象。由于热积累效应,栅极下方靠漏侧是最先发生熔融烧毁的部位,严重影响了器件的可靠性,而漏极串联电阻可以有效提高器件抗微波损伤能力。最后,对微波信号损伤的HEMT进行表面形貌失效分析,表明仿真与试验结果基本相符。
[Abstract]:For typical GaAs low noise amplifier with high electron mobility transistor, a two-dimensional electrothermal model of HEMT low noise amplifier is established by using semiconductor simulation software Sentaurus-TCAD. The degradation of carrier mobility and the avalanche effect of carrier avalanche are considered. The transient response of the device in the case of high power microwave (HPM) injected by drain electrode is analyzed. By analyzing the variation of the electric field intensity, current density and temperature distribution with the time of the signal action, the internal electric field intensity, current density and temperature distribution of the device are analyzed. The damage effect and mechanism are studied. The results show that when the amplitude of drain injection is 17.5 V and the frequency is 14.9 GHz, The change of peak temperature with the signal action time shows the law of "increase-decrease-increase" periodically. The peak value of positive half cycle electric field mainly appears in the drain pole when the temperature decreases in the positive half period and the temperature increases in the negative half period. The peak value of the positive half cycle electric field mainly appears in the drain pole. The peak value of negative half-cycle electric field mainly appears at the leakage side of the gate, and the end current appears obvious bimodal phenomenon after the second cycle. Because of the heat accumulation effect, the leakage near the bottom of the gate is the first place where the melting and burning occurs. The reliability of the device is seriously affected, and the drain resistance can effectively improve the ability of the device to resist microwave damage. Finally, the surface morphology failure analysis of the microwave signal damaged HEMT shows that the simulation results are in good agreement with the experimental results.
【作者单位】：中国空间技术研究院西安分院;
【分类号】：TN386

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