场效应管瞬态电热特性的谱元法分析

发布时间：2018-02-25 01:27

本文关键词： 时域谱元法场效应管瞬态模拟电热特性　出处：《南京理工大学》2015年硕士论文　论文类型：学位论文

【摘要】：半导体器件及其组成的集成电路是电子设备的基本单元。半导体技术的不断进步,使得电路的集成程度越来越高,促进了集成电路技术的快速发展,这极大的改进了电子设备的性能,更加满足人们对科技快速进步的需求。集成电路技术的发展反过来促进了半导体技术研究的不断向前。计算机模拟在半导体技术的研究过程中为工程实践提供了可靠的参考和指导,具有至关重要的作用,因此,研究半导体器件的仿真模拟有着十分重要的现实意义。本文以场效应管为研究对象,详细介绍了时域谱元法模拟分析场效应管瞬态电热特性的过程。主要成果包括以下几个方面：首先,以硅基金属-氧化物-半导体场效应管(MOSFET)为例,推导了漂移-扩散模型方程的时域谱元法表达式,耦合求解模型方程,得到了瞬态信号下MOSFET的电特性；推导了热传导方程的时域谱元法表达式,通过求解热传导方程,得到了瞬态信号下MOSFET的热效应。在此基础上考虑温度对如碰撞电离项、迁移率等参量的影响,实现了对MOSFET瞬态电热特性的耦合模拟。其次,以砷化镓(GaAs)金属-半导体场效应管(MESFET)为例,推导了含肖特基接触边界条件的漂移-扩散模型方程的时域谱元法表达式,模拟了瞬态信号下GraAs MESFET的瞬态电热特性；以砷化镓(GaAs)/硅(Si)金属-半导体场效应管(MESFET)为例,推导了含热离子散射边界条件和肖特基接触边界条件的漂移-扩散模型方程的时域谱元法表达式,模拟了瞬态信号下GaAs/Si MESFET的瞬态电热特性。最后,介绍了一种将场效应管模型方程和外电路约束条件联合求解的方法,详细介绍了试探解的选取,模拟了一个N沟道MOSFET共源放大电路的基本特性和MOSFET在电路中正常工作时的瞬态电热特性。
[Abstract]:Semiconductor devices and their integrated circuits are the basic units of electronic equipment. With the continuous progress of semiconductor technology, the integration degree of circuits becomes higher and higher, which promotes the rapid development of integrated circuit technology. This has greatly improved the performance of electronic devices, In turn, the development of integrated circuit technology promotes the development of semiconductor technology. Computer simulation provides engineering practice in the research process of semiconductor technology. Reliable reference and guidance, Therefore, it is very important to study the simulation of semiconductor devices. The process of simulating and analyzing the transient electrothermal characteristics of FET by time-domain spectral element method is introduced in detail. The main results include the following aspects: firstly, taking MOSFETs as an example, The expression of time-domain spectral element method for drift-diffusion model equation is derived, and the electrical properties of MOSFET under transient signal are obtained by coupled solution of the model equation, and the expression of time-domain spectral element method for heat conduction equation is derived, and the heat conduction equation is solved by solving the heat conduction equation. The thermal effect of MOSFET under transient signal is obtained. Considering the effect of temperature on parameters such as collision ionization term and mobility, the coupling simulation of transient electrothermal characteristics of MOSFET is realized. Taking GaAs (GaAs) metal-semiconductor field effect tube (MESFET) as an example, the expression of drift-diffusion model equation with Schottky contact boundary condition is derived, and the transient electrothermal characteristics of GraAs MESFET under transient signal are simulated. Taking GaAs GaAs / Si Si) metal-semiconductor field effect tube (MESFET) as an example, the expressions of drift-diffusion model equations containing thermal ion scattering boundary conditions and Schottky contact boundary conditions are derived by time-domain spectral element method. The transient electrothermal characteristics of GaAs/Si MESFET under transient signal are simulated. Finally, a method to solve the FET model equation and external circuit constraints is introduced, and the selection of the trial solution is introduced in detail. The basic characteristics of a N-channel MOSFET common source amplifier and the transient electrothermal characteristics of MOSFET in normal operation are simulated.
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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