纳米CMOS器件新结构与阈值电压模型研究

发布时间：2018-04-03 22:20

本文选题：双材料栅　切入点：FinFET　出处：《南京邮电大学》2015年硕士论文

【摘要】：互补氧化物半导体(Complementary Metal-Oxide-Semiconductor,CMOS)器件尺寸进入深亚微米以后,传统的金属氧化物半导体场效应晶体管MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)的短沟道效应(Short Channel Effects,SCEs)造成的器件性能退化越来越严重。国内外提出了许多新的器件结构和改进方法来抑制器件的短沟道效应,提高器件的性能和工作效率。其中双材料栅(Dual Material Gate,DMG)结构和双介质(Dual Insulator,DI)栅结构是通过改变沟道内的电势和电场分布的方法,能够同时抑制短沟道效应和提升载流子输运效率的新结构。本论文将DMG结构应用于体硅鱼鳍型场效应晶体管(Bulk-Fin Field-Effect Transistor,Bulk-FinFET)结构,提出了一种新的器件结构DMG-Bulk-Fin FET。并且用三维仿真软件DAVINCI模拟比较了新结构与传统的体硅FinFET结构的性能,验证了新结构的可行性以及比起传统结构在抑制漏致势垒降低效应(Drain-Induced-Barrier-Lowering,DIBL),提高输出电流和跨导等性能方面的优势。通过比较DMG结构的两种材料栅长比例和功函数差值这两个重要参数对器件各方面性能的影响,设计了DMG结构应用在体硅FinFET上时最优的结构参数。本论文还求解了双介质双栅MOSFET(Dual Insulator-Double Gate MOSFET,DI-DG MOSFET)结构的表面电势模型。在电势模型的基础上,利用阈值电压的物理意义给出了阈值电压的求解方程,并解得通用的阈值电压表达式和长沟阈值电压表达式。比较二维仿真软件MEDICI的模拟结果和模型解析结果,验证了模型的准确性。分析了DI-DG MOSFET器件的不同结构参数对DI-DG MOSFET器件的沟道表面电势和阈值电压的影响。
[Abstract]:At home and abroad, many new device structures and improved methods have been proposed to suppress the short channel effect and improve the performance and efficiency of the devices.The dual Material gouge structure and the dual insulator DIG structure are new structures which can suppress the short channel effect and improve the carrier transport efficiency simultaneously by changing the electric potential and electric field distribution in the channel.In this paper, the DMG structure is applied to bulk fin type field effect transistor Bulk-Fin Field-Effect transistork-FinFETs, and a new device structure, DMG-Bulk-Fin FETs, is proposed.The performance of the new structure is compared with that of the traditional bulk silicon FinFET structure by using the 3D simulation software DAVINCI.The feasibility of the new structure is verified and the advantages of the new structure in suppressing the leakage barrier reduction effect and improving the output current and transconductance are verified.By comparing the effects of the two important parameters of gate length ratio and power function difference of DMG structure on the performance of the device, the optimal structural parameters of DMG structure applied to bulk silicon FinFET are designed.The surface potential model of dual-dielectric double-gate MOSFET(Dual Insulator-Double Gate MOSFETs DI-DG MOSFETs is also solved in this paper.Based on the potential model, the solution equation of threshold voltage is given by using the physical meaning of threshold voltage, and the general expression of threshold voltage and the expression of long channel threshold voltage are obtained.The accuracy of the model is verified by comparing the simulation results of the two dimensional simulation software MEDICI with the analytical results of the model.The influence of different structure parameters of DI-DG MOSFET device on channel surface potential and threshold voltage of DI-DG MOSFET device is analyzed.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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