基于界面修饰的高性能有机场效应晶体管的研究

发布时间：2018-04-07 14:51

本文选题：有机场效应晶体管　切入点：界面修饰　出处：《南京邮电大学》2015年硕士论文

【摘要】：随着电子信息时代的迅猛发展,有机场效应晶体管(OFET)作为有机电子元器件的重要组成部分,其发展速度也不容小觑。它可以被广泛应用于存储器、电子开关、射频标签、电子书等领域,因此对于有机场效应晶体管的性能需求越来越高。为了满足对高性能有机场效应晶体管的需要,制备高质量的OFET将成为一项长期并且必要的任务。本文研究了其器件结构与工作原理以及电学特性的表征方法,决定根据器件结构,针对场效应晶体管的两个重要界面进行优化,设计了多种修饰方案,制备器件,通过测量其电学性质验证修饰效果,具体研究内容为:首先,我们采用了十八烷基硅烷(OTS)对二氧化硅绝缘层进行自组装单层修饰,还有聚甲基丙烯酸甲酯(PMMA)修饰二氧化硅表面,两者都取得了较好的修饰效果,器件迁移率提高了一个数量级。除此之外,还利用组内自己合成的硫醇材料修饰器件的源漏电极(金电极),器件的电学性质也有了一定的提高,通过测算电极与半导体间的接触电阻,验证了加入修饰材料后有效降低了接触电阻从而提高了器件性能。其次,我们探究了不同的退火方式对器件性能的影响。采用了几种较为常用的修饰材料同时进行快速退火与慢速退火的对比,得出普遍快速退火更有助于载流子的传输的结论,并且通过原子力显微镜图像(AFM)、X-射线衍射(XRD)、接触角测量的方法进行具体分析,发现快速退火更有助于半导体层并五苯的结晶以及粒子的分布,这是导致其性能较高的本质原因。最后,我们还设计了一种双层聚合物修饰绝缘层的结构,采用PMMA与交联聚(4-乙基苯酚)(PVP)两种不同的聚合物修饰二氧化硅(SiO2)绝缘层,从而使其迁移率达到1cm2/Vs。除了高迁移率之外,这一器件还具备较好的空气稳定性。我们通过对结构的进一步优化,找到了最佳匹配浓度,同样通过AFM、XRD、接触角测量的方法分析,探究最佳浓度与结构上并五苯的生长形貌与结晶度,得出在这一条件下粒子最大,结晶度也相对最高,较低表面能的介电层更有助于并五苯生长以及器件在空气中的稳定存在。
[Abstract]:With the rapid development of the electronic information age, the airport effect transistor (OFET) as an important part of organic electronic components, its development speed can not be underestimated.It can be widely used in memory, electronic switches, radio frequency tags, e-books and so on.In order to meet the needs of high performance airfield effect transistors, the preparation of high quality OFET will become a long-term and necessary task.In this paper, the structure and working principle of the device and the characterization method of the electrical properties are studied. According to the structure of the device and the optimization of the two important interfaces of the FET, a variety of modification schemes are designed to fabricate the device.The effect of the modification was verified by measuring its electrical properties. Firstly, we used octadecyl silane (OTS) to modify the insulating layer of silica by self-assembled monolayer, and polymethyl methacrylate (PMMA) was used to modify the surface of silica.Both of them achieved good modification effect and the mobility of the device increased by an order of magnitude.In addition, the source and leakage electrodes (gold electrodes, electrical properties of the devices) modified by thiol materials in the group have also been improved, and the contact resistance between the electrodes and semiconductors has been measured.It is verified that the contact resistance is reduced effectively and the performance of the device is improved by adding the modified material.Secondly, we investigate the effect of different annealing methods on the device performance.The comparison of rapid annealing and slow annealing with several common modified materials is carried out. It is concluded that universal rapid annealing is more helpful to carrier transport.By AFM image and contact angle measurement, it is found that rapid annealing is more helpful to the crystallization of semiconductor layer and the distribution of particles, which is the essential reason for its high performance.Finally, we have designed a double-layer polymer modified insulating layer, which is modified with PMMA and cross-linked poly (4-ethylphenol) as the insulator of SiO2 / SiO2. The mobility of the insulator is up to 1 cm ~ 2 / V _ (2).In addition to high mobility, this device also has good air stability.Through further optimization of the structure, we find the best matching concentration. Also, by means of AFMX RD and contact angle measurement, we find out the growth morphology and crystallinity of pentabenzene in the optimum concentration and structure, and get the maximum particle size under this condition.The crystallinity is also relatively high, and the dielectric layer with lower surface energy is more conducive to the growth of pentabenzene and the stable existence of the device in air.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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