设计和工艺参数对声表面波器件性能的影响

发布时间：2018-04-15 19:50

本文选题：声表面波(SAW)器件 + 压电薄膜　；参考：《微纳电子技术》2017年11期

【摘要】：设计并制作了多种声表面波(SAW)器件,并研究了设计参数与工艺参数对器件特性的影响。首先在同一块掩膜板内设计了多组不同尺寸与间距参数的SAW器件,然后用微电子机械系统(MEMS)微加工工艺在Mg_xZn_(1-x)O/Si压电薄膜和128°YZ与XZ取向的LiNbO_3压电材料衬底上制作了多种SAW器件。利用X射线衍射(XRD)对压电材料的压电晶向进行了测量、表征和工艺比较,确定了适宜的薄膜溅射条件。利用网络分析仪(VNA)及高频探针台测量了S11高频特性,测量结果表明相对应的谐振频率值与理论值相符合,测出的谐振频率在80~330 MHz。分析了工艺偏差对SAW器件谐振特性的影响。分析结果表明由于工艺偏差导致的叉指电极的指宽差异导致了谐振频率与理想计算值的偏差,工艺偏差同样会导致S11曲线的不对称和谐波的产生。通过LiNbO_3上制作的SAW器件计算出的声波传播速度比较统一,128°YX LiNbO_3上制作的SAW器件计算出的声波传播速度为3 800~3 900 m/s,XZ LiNbO_3上制作的SAW器件计算出的声波传播速度为3 300~3 400 m/s;而在Mg_xZn_(1-x)O/Si压电薄膜上制作的SAW器件推算出的声波传播速度与设计波长或相关尺寸有关。
[Abstract]:Several surface acoustic wave (saw) SAW devices are designed and fabricated, and the effects of design parameters and process parameters on the characteristics of the devices are studied.At first, several SAW devices with different sizes and spacing parameters were designed in the same mask. Then, a variety of SAW devices were fabricated on Mg_xZn_(1-x)O/Si piezoelectric thin films and 128 掳YZ and XZ oriented LiNbO_3 piezoelectric substrates by microelectromechanical system (MEMS) microfabrication.The piezoelectric orientation of piezoelectric materials was measured by X-ray diffraction (XRD). The appropriate sputtering conditions were determined by comparing the properties of the films.The high frequency characteristic of S11 is measured by using network analyzer VNAand high frequency probe station. The measured results show that the corresponding resonant frequency is in agreement with the theoretical value, and the measured resonant frequency is at 80 ~ 330MHz.The effect of process deviation on resonant characteristics of SAW devices is analyzed.The analysis results show that the difference in finger width of the interDigital electrode caused by the process deviation leads to the deviation of the resonance frequency from the ideal calculation value, and the process deviation will also lead to the asymmetry of the S11 curve and the generation of harmonics.The velocity of sound wave propagation calculated by SAW device made on LiNbO_3 is compared with that calculated by SAW device made on 128 掳YX LiNbO_3. The speed of sound wave propagation calculated by SAW device is 3 800 / 3 900 m / s / s / s XZ LiNbO_3 and the speed of sound wave propagation calculated by SAW device is 3 300 / 3 400M / s; and the SAW device made on the Mg_xZn_(1-x)O/Si piezoelectric thin film can calculate the sound wave propagation speed depending on the design wavelength or the relevant size.
【作者单位】：上海交通大学电子信息与电气工程学院;
【基金】：国家自然科学基金资助项目(F040801)
【分类号】：TN65

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