欧姆接触Al电极的研究及光电探测器件试制

发布时间：2018-04-18 19:49

  本文选题：欧姆接触 + Al电极　； 参考：《云南大学》2015年硕士论文

【摘要】：Ge/Si量子点材料具有三维量子限制效应,且易于实现与硅基集成电路相集成,在未来的光电器件中有很大的应用前景。本文围绕Ge/Si量子点光电探测器件进行了一些基础性研究,研究了此磁控溅射制备Ge点,并研究了磁控溅射制备欧姆接触A1电极,包括溅射功率、沉积厚度、退火温度和时间等因素对Al膜形貌和性能的影响。另外,开展了光探测器原型器件的试制。 首先研究了磁控溅射制备Ge点,通过退火对Ge量子点的密度和尺寸进行调控。利用原子力显微镜(AFM)和拉曼(Raman)对制备Ge量子点的形成机理和演变规律进行了研究。AFM测试表明,随着退火温度的升高,量子点的体积和密度都增加,在650℃退火10min的样品量子点密度达到约3.5×1010cm-2。通过拉曼光谱对比分析,发现Ge-Ge振动模随着退火温度的升高而蓝移,认为主要是由于随退火温度升高位错不断减少而导致的。 然后,采用磁控溅射进行了Si基Al膜的制备研究,研究了溅射功率、沉积厚度、退火温度和时间等因素对Al膜形貌和性能的影响。通过SEM、 EDS等表征手段对样品表面形貌和元素含量进行了表征。测试显示较优的Al膜制备参数是：溅射功率100W,沉积厚度600nm,退火温度550℃。采用较优参数,研究了退火时间对Al-Si欧姆接触性能的影响,并测试了其电流-电压(I-V)特性曲线。结果显示未退火和退火5min的样品没有形成欧姆接触,550℃退火10min和30min的样品都形成较好的欧姆接触,且退火30min的样品接触电阻更低。 最后,开展了Ge/Si量子点为基础的光电探测器的试制。以PIN结构为基础,制备了三个原型器件,并进行了其I-V曲线测试。通过调整A1电极厚度、通光控、量子点层数,P型层生长条件等参数,最终器件#003得到了较好的I-V特性曲线。
[Abstract]:Ge/Si quantum dots have three-dimensional quantum confinement effect and are easy to be integrated with silicon based integrated circuits. It has great application prospects in the future optoelectronic devices.In this paper, we have carried out some basic research on Ge/Si quantum dot photodetectors. We have studied the preparation of GE dots by magnetron sputtering, and the ohmic contact A1 electrodes prepared by magnetron sputtering, including sputtering power and deposition thickness.Effects of annealing temperature and time on the morphology and properties of Al films.In addition, the prototype device of photodetector is developed.Firstly, the GE dots prepared by magnetron sputtering are studied. The density and size of GE quantum dots are controlled by annealing.The formation mechanism and evolution of GE quantum dots were studied by atomic force microscopy (AFM) and Raman Raman. AFM measurements showed that the volume and density of GE quantum dots increased with the increase of annealing temperature.The quantum dot density of the sample annealed at 650 鈩，

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