高功率半导体激光热特性分析与热管理技术研究

发布时间：2018-04-27 05:23

本文选题：半导体激光器 + 热特性　；参考：《长春理工大学》2017年硕士论文

【摘要】：半导体激光器凭借体积、重量、寿命及效率等方面优势,在工业、科研、医疗以及军事等领域被广泛应用。伴随着输出功率的提高,产生的废热也在不断增加,而半导体激光器的诸多性能都受到热效应制约。所以,对高功率器件的热特性以及热管理技术的分析研究具有十分重要的意义。本文从热特性分析的理论出发,分析了半导体激光器内部的产热机制,传热机理以及器件的温升对阈值电流、输出功率、斜率效率、波长和寿命的影响。采用有限元数值模拟的方法,分别利用ANSYS和Solidworks Simulation对单管、多单管以及巴条半导体激光器的热特性进行模拟分析。首先,对于单个发光单元器件,利用ANSYS有限元软件对COS、C-Mount两种封装形式的单芯片半导体激光器的热特性进行分析。对COS封装的两种贴片形式进行模拟,从热沉的角度分析了倒装芯片温度较低的原因,针对不同的热沉材料,改变其导热率,得到了不同器件的热阻;对C-Mount模型的两种建模方式进行对比,通过改变C-Mount热沉的厚度,得到了芯片温度的变化规律,并从热流的角度进行分析。通过引入导热性能良好的金刚石膜与石墨烯膜,设计了一种较为理想的C-Mount复式散热结构。接下来,对于复杂的含有多个发光单元的半导体激光器模型,使用Solidworks Simulation软件进行模拟。分析了多单管半导体激光模块在连续(CW)状态下的稳态热行为,深入讨论了占空比对热串扰行为的影响;最后,针对被动式制冷半导体Bar条热应力分布不均导致的“Smile效应”进行分析,建立CS传导冷却激光器模型,通过优化热沉散热结构改变温度分布,进而达到Bar条温度均匀化目的。
[Abstract]:Semiconductor lasers are widely used in industrial, scientific, medical and military fields due to their advantages in volume, weight, life and efficiency. With the increase of output power, the waste heat is also increasing, and many properties of semiconductor lasers are restricted by thermal effect. Therefore, it is of great significance to analyze the thermal characteristics and thermal management technology of high power devices. Based on the theory of thermal characteristic analysis, the mechanism of heat production, heat transfer mechanism and the effect of temperature rise on threshold current, output power, slope efficiency, wavelength and lifetime of semiconductor laser are analyzed in this paper. The thermal characteristics of single-tube, multi-tube and bar-bar semiconductor lasers are simulated and analyzed by using finite element numerical simulation method and ANSYS and Solidworks Simulation, respectively. Firstly, the thermal characteristics of single chip semiconductor lasers with two packaging forms are analyzed by ANSYS finite element software. In this paper, two kinds of COS packaging are simulated, and the reason of low temperature is analyzed from the point of view of heat sink. According to different heat sink materials, the thermal resistance of different devices is obtained by changing their thermal conductivity. By comparing the two modeling methods of C-Mount model, the variation law of chip temperature is obtained by changing the thickness of C-Mount heat sink, and the heat flux is analyzed. An ideal C-Mount compound heat dissipation structure was designed by introducing diamond film and graphene film with good thermal conductivity. Then, the complex model of semiconductor laser with multiple luminescent cells is simulated by Solidworks Simulation software. The steady-state thermal behavior of multi-transistor semiconductor laser modules under CW state is analyzed, and the effect of duty cycle on the thermal crosstalk behavior is discussed. The "Smile effect" caused by the uneven distribution of thermal stress in passive cooling semiconductor Bar strip is analyzed, and a CS conduction cooling laser model is established. The temperature distribution is changed by optimizing the heat sink structure, and the temperature uniformity of the Bar strip is achieved.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN248.4

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