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单层有机电致发光器件设计与制备

发布时间:2018-05-08 17:38

  本文选题:单层 + 磷光 ; 参考:《吉林大学》2015年硕士论文


【摘要】:近年来,单层有机电致发光器件(SLOLED)由于其结构简单,制备过程相对更简便,成为业界研究的热点。在SLOLED中,发光层(EML)既是激子产生、辐射复合的地方,同时也起着传输载流子的作用,电子、空穴分别从阴极和阳极注入之后,直接传输进入到发光层中,辐射复合发光。 首先,我们制备了不包含阳极修饰层和包含不同阳极修饰层的SLOLED,阳极修饰材料采用MoO3和PEDOT:PSS,器件结构为ITO/空穴注入层(HIL)/POAPF:Firpic (10%,100nm)/LiF (0.5nm)/Mg:Ag,其中,以PEDOT:PSS为阳极修饰材料的单层器件,性能最佳,以类似的结构,我们还制备了绿光、红光SLOLED。对于单层蓝光OLED,其电致发光光谱(EL)与传统的以Firpic蓝光染料的多层器件有区别,来自侧峰的发光有所增强。针对蓝光器件EL光谱变化的问题,对EML的厚度进行了调整,又制备了EML厚度为60、70、80和90nm的器件,随着厚度的变化,器件的EL光谱也随之发生改变,来自侧峰的强度随着EML厚度的变薄而减弱。其中EML厚度为70nm的器件,其EL光谱接近传统的多层器件的EL光谱,器件效率也比较高。针对EL光谱变化的现象,我们进行了理论分析与实验探究,发现这是由于器件内部的弱微腔效应导致的。 然后,基于上面的结果,将EML厚度控制在70nm,采用双掺杂的方式,制备了三组白光OLED,与Firpic光谱互补的染料选用了PO-01、PQ2Ir和Ir(BT)2acac,制得的三组白光OLED中,以PO-01和Firpic组合所得的白光OLED器件效率最高,在1000cd/m2的亮度下,器件的功率效率为20.9lm/W,在5000cd/m2的高亮度下,器件功率效率仍能达到14.5lm/W。此外,以Ir(BT)2acac和Firpic组合所得的白光OLED,其光谱性能最好,,随着驱动电压的变化,器件的光谱改变甚小。 最后,考虑到PEDOT:PSS是一种酸性材料,它的存在会影响器件的稳定性,因此拟采用另外一种材料来取代PEDOT:PSS,本课题中我们采用HAT-CN,器件结构为ITO/HAT-CN (xnm)/POAPF:Firpic (10%,100nm)/LiF(0.5nm)/Mg:Ag。通过调节HAT-CN的厚度来研究其空穴注入效果,发现当HAT-CN的厚度超过10nm时,器件性能变得较差,在HAT-CN厚度为3nm左右时,获得了较优的器件性能,此时的器件效率可以与以PEDOT:PSS为阳极修饰材料时的器件相比拟。
[Abstract]:In recent years, monolayer organic electroluminescent devices (SLOLED) have become a hot research area because of their simple structure and simpler preparation process. In SLOLED, the emitter layer (SLOLED) is not only the place where excitons are produced and radially recombined, but also the transport carriers. After the electrons and holes are injected from cathode and anode respectively, they are transported directly into the luminescence layer, and the emission recombination luminescence is obtained. First of all, we have prepared SLOLED without anodic modification layer and different anodic modification layer. The anode modification material is made of MoO3 and PEDOT: PSS, and the device structure is ITO/ hole injection layer / POAPFF: Firpic 1010 / 100nm-1 / lif 0.5 nmr / mg: Ag. among them, the single layer device with PEDOT:PSS as anode modifier has the best performance. With similar structures, we also prepared green and red light SLOLED. For single layer blue Ole, the electroluminescent spectra are different from the traditional multilayer devices with Firpic blue dye, and the luminescence from the side peak is enhanced. Aiming at the change of El spectrum of blue light device, the thickness of EML is adjusted, and the device with EML thickness of 6070 / 80 and 90nm is fabricated. The El spectrum of the device changes with the change of thickness. The intensity from the side peak weakens with the thickness of EML. The El spectra of EML with 70nm thickness are similar to those of conventional multilayer devices, and the device efficiency is also high. According to the phenomenon of El spectrum variation, we have carried out theoretical analysis and experimental investigation. It is found that this phenomenon is caused by the weak microcavity effect inside the device. Then, based on the above results, the thickness of EML was controlled at 70 nm, and three groups of white light Ole D were prepared by double doping. The dyes complementary to Firpic spectra were selected PO-01 PQ _ 2Ir and Irn _ B _ T _ 2acac.Three groups of white light OLED were prepared. The white light OLED device with PO-01 and Firpic has the highest efficiency. Under the brightness of 1000cd/m2, the power efficiency of the device is 20.9lm / r W, and the power efficiency of the device can reach 14.5lm / W under the high brightness of 5000cd/m2. In addition, the white light Ole with Ir(BT)2acac and Firpic has the best spectral performance. With the change of driving voltage, the spectral change of the device is very small. Finally, considering that PEDOT:PSS is an acidic material, its existence will affect the stability of the device, so we propose to use another material to replace PEDOT: PSS. In this paper, we use HAT-CN.The device structure is ITO/HAT-CN / POAPF: Firpic 1010nm/ LiF0.5nm / mg: Ag. By adjusting the thickness of HAT-CN to study the hole injection effect, it is found that when the thickness of HAT-CN exceeds that of 10nm, the performance of the device becomes worse, and when the thickness of HAT-CN is about 3nm, the better performance of the device is obtained. The device efficiency can be compared with that when PEDOT:PSS is used as anode modification material.
【学位授予单位】:吉林大学
【学位级别】:硕士
【学位授予年份】:2015
【分类号】:TN383.1

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