大面积InGaAs-MSM光电探测器研制及其暗电流特性分析

发布时间：2018-05-12 20:42

本文选题：红外探测器 + InGaAs　；参考：《中国科学院研究生院(西安光学精密机械研究所)》2015年硕士论文

【摘要】：MSM(金属-半导体-金属)型光电探测器背靠背肖特基二极管对称简洁的平面结构使得其具有较低的寄生电容,同时与高速FET工艺兼容,探测器易于集成,相比于APD和PIN结构,MSM结构更容易制得高带宽、大面积器件;直接带隙半导体材料InGaAs的量子效率和电子迁移率较高,且响应波长范围广,这些优势使得InGaAs-MSM探测器在通信领域的应用越来越广泛。本文首先介绍了红外探测器的基本情况,提出了InGaAs-MSM探测器的研究意义;再从InGaAs材料和MSM结构的原理两个方面讲述了InGaAs-MSM探测器的工作过程,并对其主要表征参数及提高探测器性能的措施进行了阐述;根据探测器的工作原理进行了结构的设计:衬底材料选用与InGaAs晶格匹配的InP材料,响应层设计为1000 nm的InGaAs,响应层上下均设计缓冲层;设计了InAlGaAs/InGaAs短周期超晶格、InAlAs肖特基势垒增强层和SiO2钝化层,进一步降低了探测器的暗电流;设计探测器面积为100×100μm2,MSM金属叉指电极指宽和指间距均为3μm。完成探测器的制备后,对其光电参数进行了表征:面积100×100μm2的InGaAs探测器的峰值响应波长为1670 nm,1550 nm波段的相对光谱响应度为0.8804;5 V偏置电压下探测器的暗电流密度为0.6-0.8 pA/μm2,3dB带宽为6.8GHz,上升沿为70 ps;1550 nm波段响应度达0.554 A/W;相应的外量子效率达88.7%。在此基础上对探测器的暗电流特性进行了分析,分别阐述了InAlGaAs/InGaAs短周期超晶格、InAlAs肖特基势垒增强层和SiO2钝化层对探测器暗电流的抑制机理。
[Abstract]:MSM (metal-semiconductor-metal) photodetectors have low parasitic capacitance due to their simple and symmetrical planar structure, and are compatible with high speed FET process, and the detectors are easy to integrate. Compared with APD and PIN structures, it is easier to fabricate high bandwidth and large area devices, and the direct bandgap semiconductor material InGaAs has higher quantum efficiency and electron mobility, and a wide range of response wavelengths. These advantages make InGaAs-MSM detectors more and more widely used in the field of communication. In this paper, the basic situation of infrared detector is introduced, and the research significance of InGaAs-MSM detector is put forward, and then the working process of InGaAs-MSM detector is described from two aspects: InGaAs material and the principle of MSM structure. The main characterization parameters and the measures to improve the performance of the detector are described. The structure of the detector is designed according to the working principle of the detector. The substrate material is selected as the InP material matching the InGaAs lattice. The response layer is designed as 1000 nm InGaAs, and the buffer layer is designed up and down, and the InAlGaAs/InGaAs short period superlattice InAlAs Schottky barrier enhancement layer and SiO2 passivation layer are designed to further reduce the dark current of the detector. The design area of the detector is 100 脳 100 渭 m ~ (2). The finger width and finger spacing of the metal cross finger electrode are 3 渭 m. After completing the fabrication of the detector, The optoelectronic parameters were characterized: the peak response wavelength of the InGaAs detector with an area of 100 脳 100 渭 m ~ 2 was 1670 nm ~ 1550nm, and the relative spectral responsivity of the detector was 0.8804 渭 m ~ 5 V bias voltage. The dark current density of the detector was 0.6-0.8 pA/ 渭 m ~ 2 ~ (2) dB bandwidth was 6.8 GHz, and the rising edge was 70 GHz. The responsivity is 0.554 A / W and the external quantum efficiency is 88.7nm. On this basis, the dark current characteristics of the detector are analyzed, and the suppression mechanism of the detector dark current by the InAlGaAs/InGaAs short period superlattice InAlAs Schottky barrier enhancement layer and the SiO2 passivation layer is described respectively.
【学位授予单位】：中国科学院研究生院(西安光学精密机械研究所)
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN15

【相似文献】