压力对换流阀用压接型IGBT器件功率损耗的影响

发布时间：2018-05-12 21:33

本文选题：换流阀 + 压接型绝缘栅双极型晶体管(IGBT)器件　；参考：《半导体技术》2017年09期

【摘要】：功率损耗一直是功率半导体器件应用时备受关注的问题。压接型绝缘栅双极型晶体管(IGBT)器件靠外部压力使内部各个组件保持电气和机械连接,因此压力直接或间接地影响着压接型IGBT器件的功率损耗。将压接型IGBT器件工作时产生的结温作为耦合变量引入,基于此建立了IGBT器件应用于调制脉宽(PWM)换流设备时的功率损耗计算模型,并详细分析了影响功率损耗的各种因素,包括机械压力、开关频率等。以换流阀用3 300 V/1 500 A压接型IGBT器件为例,采用有限元法研究了压力对压接型IGBT器件功率损耗的影响,重点探讨了器件内部各芯片功率损耗的变化情况。结果表明,增加压力一定程度上可以降低压接型IGBT器件的功率损耗,改善器件内部芯片结温分布不均的问题。
[Abstract]:Power loss has always been the focus of attention in the application of power semiconductor devices. The internal components of the IGBT devices are connected by external pressure, so the pressure directly or indirectly affects the power loss of the IGBT devices. In this paper, the junction temperature generated during the operation of IGBT is introduced as a coupling variable. Based on this, a power loss calculation model for IGBT devices used in modulation pulse width converter is established, and various factors affecting the power loss are analyzed in detail. Including mechanical pressure, switching frequency, etc. Taking the 3 300V / 1 500A IGBT device as an example, the influence of pressure on the power loss of the IGBT device is studied by finite element method, and the variation of the power loss of each chip inside the device is emphatically discussed. The results show that increasing the pressure can reduce the power loss of IGBT devices and improve the uneven distribution of chip temperature inside the devices.
【作者单位】：华北电力大学新能源电力系统国家重点实验室;国家电网全球能源互联网研究院;
【基金】：国家电网公司科技项目(5455GB160006,5455DW150011)
【分类号】：TN322.8

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