新型FBAR及传感技术的研究

发布时间：2018-05-13 23:10

本文选题：薄膜体声波谐振器(FBAR) + 聚酰亚胺(polyimide)　；参考：《浙江大学》2016年硕士论文

【摘要】：近年来随着可穿戴设备等智能硬件的兴起,人们对电子元器件的微型化、柔性化、透明化的需求越来越迫切。薄膜体声波谐振器(FBAR)是一种应用广泛的MEMS高频器件,相比其它频率器件FBAR具有体积更小,品质因数更高等优点,由FBAR构成的滤波器、双工器被应用在最新的iphone手机等产品中；FBAR具有高灵敏度的特点,被广泛用于医学、生物和物理等各种传感领域。可以预见,在未来电子产品中,柔性、透明的FBAR将有极为广泛的应用前景。本文提出一种新型FBAR结构,使用聚合物作为支撑层,简化了FBAR制备工艺,提高了成品率,可以将FBAR做在任意基底上,具有柔性和透明的潜能。经过实验验证,新型FBAR与传统结构FBAR性能相当。并基于该新型结构FBAR,提出了多种新型的实际应用方案。具体的研究内容和成果如下：1、建立了新型FBAR仿真模型。用ADS软件进行了Mason模型仿真,用Comsol软件进行了有限元仿真分析。根据理论分析和不同材料的声阻抗特性,对基底材料、支撑层polymer材料和支撑层厚度这3个条件进行了对照仿真实验。得到了制作新型FBAR最佳支撑层材料-聚酰亚胺(polyimide简称PI)及其厚度(9μm)等条件。2、获得了成熟稳定的新型结构FBAR的制备工艺。在实验室MEMS工艺条件下,成功制备出了不同厚度P1支撑层的新型FBAR器件(以下简称PI-FBAR)。测试结果与仿真结果、背刻蚀FBAR结果进行了对比分析。经测试,2μm厚度ZnO压电层的PI-FBAR谐振频率在1.5GHz左右,与传统结构相同；当支撑层PI厚度9μm后器件性能与传统结构性能相当,Q值普遍能达500左右。3、制备了不同基底上的PI-FBAR。将PI-FBAR制备在了铜片、玻璃和纸衬底上。并对这些不同基底的FBAR谐振频率fr和品质因数Q进行了对比和理论分析。验证了这种新型FBAR具有柔性和透明的潜能。4、提出了新型FBAR的多种应用。包括(1)基于它的温度传感,纸上FBAR的温度系数为-45.47 ppm/k,铜上的为-63.37 ppm/k,Si上的为-54.56 ppm/k。(2)基于新结构,选用铁磁性材料Ni做电极,提出了一种新型的磁力传感器。(3)基于新结构提出了一种紫外线传感器(4)本文还验证了新型FBAR制作在粗糙表面的可行性,显示了新型FBAR与传统CMOS电路集成的可行性。这些应用都具有广阔的市场前景。
[Abstract]:In recent years, with the rise of smart hardware such as wearable devices, the need for miniaturization, flexibility and transparency of electronic components becomes more and more urgent. Thin Film bulk Acoustic Resonator (FBA) is a widely used MEMS high frequency device. Compared with other frequency devices, FBAR has the advantages of smaller volume, higher quality factor and so on. The filter is composed of FBAR. Duplexer is widely used in many kinds of sensing fields, such as medicine, biology, physics and so on. It can be predicted that flexible and transparent FBAR will be widely used in electronic products in the future. In this paper, a new type of FBAR structure, which uses polymer as the supporting layer, simplifies the preparation process of FBAR, improves the yield of FBAR, and can make FBAR on any substrate with the potential of flexibility and transparency. The experimental results show that the performance of the new FBAR is comparable to that of the traditional FBAR. Based on the new structure FBARs, several new practical application schemes are proposed. The specific research contents and results are as follows: 1. A new FBAR simulation model is established. The Mason model is simulated with ADS software and the finite element analysis is carried out with Comsol software. According to the theoretical analysis and the acoustic impedance characteristics of different materials, the three conditions of substrate material, support layer polymer material and support layer thickness are compared and simulated. The optimum support layer material of FBAR, polyimide (Pi) and its thickness of 9 渭 m, were obtained. The preparation process of FBAR with mature and stable structure was obtained. Under the condition of laboratory MEMS, a new type of FBAR device with different thickness P1 support layer (PI-FBA) has been successfully fabricated. The test results are compared with the simulation results and the back etching FBAR results. The PI-FBAR resonance frequency of the ZnO piezoelectric layer with 2 渭 m thickness is about 1.5GHz, which is the same as that of the traditional structure, and the PI-FBARs on different substrates have been prepared when the PI-FBARs on different substrates are obtained when the PI-FBARs on different substrates are similar to those of the conventional structures when the Pi thickness of the support layer is 9 渭 m. PI-FBAR was prepared on copper, glass and paper substrates. The FBAR resonance frequency fr and the quality factor Q of these different substrates are compared and analyzed theoretically. The new FBAR has the potential of flexibility and transparency. Finally, many applications of the new FBAR are proposed. Including 1) based on its temperature sensing, the temperature coefficient of FBAR on paper is -45.47 ppm / kg, and on copper is -63.37 ppm / kg / kg Si, -54.56 ppm / k.) based on the new structure, the ferromagnetic material Ni is used as electrode. This paper presents a new type of magnetic force sensor based on the new structure. (4) this paper also verifies the feasibility of the new FBAR fabrication on the rough surface and shows the feasibility of integrating the new FBAR with the traditional CMOS circuit. These applications have broad market prospects.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN65

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