雪崩光电二极管特性参数的简化蒙特卡洛计算

发布时间：2018-05-13 23:14

本文选题：蒙特卡洛 + 雪崩光电二极管　；参考：《华中科技大学》2015年硕士论文

【摘要】：随着器件的尺寸的越来越小,一些传统的半导体器件的模拟方法都存在不可避免的局限性。在小尺寸领域,蒙特卡洛方法作为一种可靠的模拟方法在为微观方面得到了广泛的应用。随着互联网的高速发展,网络上需要承载的数据越来越多,这对光通信网络的带宽提出了更高的要求,而光电二极管作为光接收的核心部件,因此对它的性能要求也越来越高,传统的p-i-n光电二极管已经无法满足光通信系统对带宽的要求。雪崩光电二极管因为其高灵敏度和高操作速度越来越适用于光纤通信系统,而且能够提供更高的灵敏度和信噪比。鉴于这些好处,雪崩光电二极管也广泛的应用于其他领域,比如光子计数器、成像应用和激光测距等。越来越多的研究人员开始关注对雪崩光电二级管的特性的研究。本文在对雪崩光电二极管的各种模型比较中,建立了一种简化的雪崩光电二极管蒙特卡洛计算模型,并且编写出算法程序,在软件lcc上运行算法程序,对InP APDs和InAlAs APDs的过剩噪声和雪崩增益进行了模拟计算,分析得出:对这两种材料来说,雪崩区域宽度的减小都会导致过剩噪声的降低,InP雪崩光电二极管可以选择空穴注入来产生倍增,InAlAs雪崩光电二极管可以选择电子注入来产生倍增,这样就可以得到较低的过剩噪声,同时分析指出在薄层器件中,死区效应是无法忽略的。最后运行算法程序,对四种增益材料的雪崩光电二极管的信噪比进行了计算,得出它们的最佳工作点,可以用来指导光接收机的设计。
[Abstract]:As the size of the device becomes smaller and smaller, some traditional methods of semiconductor device simulation have inevitable limitations. In the field of small scale, Monte Carlo method has been widely used as a reliable simulation method in microscopic aspects. With the rapid development of the Internet, more and more data need to be carried on the network, which puts forward higher requirements for the bandwidth of the optical communication network. As the core component of optical reception, photodiodes require more and more high performance. Traditional p-i-n photodiodes can not meet the bandwidth requirements of optical communication systems. Avalanche photodiodes are more and more suitable for optical fiber communication systems because of their high sensitivity and high operating speed, and can provide higher sensitivity and signal-to-noise ratio (SNR). In view of these advantages, avalanche photodiodes are also widely used in other fields, such as photon counters, imaging applications and laser ranging. More and more researchers are focusing on the characteristics of avalanche photodiodes. In this paper, a simplified Monte Carlo calculation model of avalanche photodiode is established in the comparison of various models of avalanche photodiode, and an algorithm program is written to run the algorithm program on the software lcc. The excess noise and avalanche gain of InP APDs and InAlAs APDs are simulated and calculated. The decrease of the width of the avalanche region will lead to the reduction of excess noise. InP avalanche photodiodes can choose hole injection to produce multiplication. InAlAs avalanche photodiode can select electron injection to produce multiplication. In this way, low excess noise can be obtained, and it is pointed out that the dead-time effect can not be ignored in thin layer devices. Finally, the SNR of the avalanche photodiodes of four kinds of gain materials is calculated by running the algorithm program, and their optimum operating points are obtained, which can be used to guide the design of optical receivers.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN312.7

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