有源层摩擦取向对有机场效应晶体管性能的影响

发布时间：2018-05-14 00:01

本文选题：有机场效应晶体管 + 气体传感器　；参考：《电子科技大学》2015年硕士论文

【摘要】：自上世纪八十年代第一个有机场效应晶体管(Organic Field-Effect Transistor,OFET)问世以来,它便在化学、物理、材料以及微电子等领域受到广泛关注。与此同时,基于OFET器件的多功能器件由于其潜在的巨大商业价值而逐渐成为研究的重点。本文以OFET为传感器件,在对介电层厚度进行优化的基础上,重点研究了有源层摩擦取向对OFET器件电学特性和气敏特性的影响。研究内容如下:1.基于PMMA/PS双介电层结构的OFET器件性能优化。采用聚甲基丙烯酸甲酯(PMMA)、聚苯乙烯(PS)作为介电层,并五苯作为有机半导体层,分别研究了PMMA和PS不同厚度对OFET器件性能的影响。实验中设计了两组OFET器件,一组固定PMMA厚度为280 nm,PS厚度分别为140 nm、170 nm、220 nm和290 nm。另一组固定PS厚度为200 nm,PMMA厚度分别为140 nm、180 nm、220 nm和250 nm。测试结果表明,当PMMA厚度为280 nm,PS厚度为220 nm时,器件具有最佳性能,迁移率达到0.15 cm2/Vs,电流开关比为2.8?105。2.有源层摩擦取向对基于PS单介电层的并五苯OFET器件气敏特性的影响。利用普通的尼龙刷对OFET器件的有源层进行摩擦取向,摩擦方向包括垂直、斜向以及平行于源漏电极。首先研究了不同取向对器件电学特性的影响,结果表明,垂直于源漏电极摩擦的器件的迁移率达到0.17 cm2/Vs,开态电流达到0.45μA,分别比未经处理的器件提高了1倍。此外,进一步研究了不同取向对器件气敏特性的影响,结果表明,平行于源漏电极摩擦的器件具有最优的气敏性能,在2 ppm的NO2气氛下,响应度和响应时间分别达到1.3%和约70 s。3.有源层摩擦取向对基于PMMA/PS双介电层的并五苯OFET器件气敏特性的影响。在制备了高性能的PMMA/PS双层介电层器件的基础上,使用尼龙刷对OFET器件的有源层进行摩擦取向,摩擦方向包括垂直、斜向以及平行于源漏电极。垂直于源漏电极摩擦的器件的迁移率达到0.46 cm2/Vs,开态电流达到60.4μA,这比未经处理的器件分别提高了2倍和1.5倍。此外,平行于源漏电极摩擦的器件具有最优的气敏性能,在2 ppm的NO2气氛下,响应度和响应时间分别达到1.1%和约50 s。与PS单介电层的器件相比,无论是否经过摩擦处理,PMMA/PS双介电层的器件都具有更优异的电学及气敏性能。最后,结合气敏机理和载流子传输理论,分析不同方向的摩擦取向对OFET器件气敏性能产生不同影响的原因。
[Abstract]:Since the first organic Field-Effect transistor (Organic Field-Effect Transistor) came out in the 1980s, it has attracted wide attention in the fields of chemistry, physics, materials and microelectronics. At the same time, multifunctional devices based on OFET devices have become the focus of research because of their potential commercial value. On the basis of optimizing the thickness of dielectric layer, the influence of friction orientation of active layer on the electrical and gas sensing properties of OFET devices is studied in this paper. The research is as follows: 1. Performance optimization of OFET devices based on PMMA/PS double dielectric layer structure. The effects of different thickness of PMMA and PS on the properties of OFET devices were investigated by using polymethyl methacrylate (PMMA) and polystyrene (PS) as dielectric layer and pentabenzene as organic semiconductor layer. Two groups of OFET devices have been designed in the experiment. One set of fixed PMMA thickness is 280 nm / s PS thickness is 140 nm / s 170 nm / s 220nm and 290nm / s respectively. In the other group, the thickness of fixed PS was 200 nm and the thickness of PMMA was 140 nm, 180 nm, 220 nm and 250 nm, respectively. The experimental results show that when the thickness of PMMA is 280nm and PS thickness is 220nm, the device has the best performance, the mobility reaches 0.15 cm ~ 2 / V _ s and the current-switching ratio is 2.8 nm / 105.2. Effect of tribological orientation of active layer on gas sensing characteristics of pentaben OFET devices based on PS single dielectric layer. The active layer of OFET device is tribalized by ordinary nylon brush. The friction direction includes vertical, oblique and parallel to the source leakage electrode. The effects of different orientations on the electrical properties of the devices are studied. The results show that the mobility of the devices perpendicular to the source leakage electrode friction is 0.17 cm ~ 2 / V _ s, and the on-state current is 0.45 渭 A, which is two times higher than that of the untreated devices. Furthermore, the effects of different orientations on the gas sensing characteristics of the devices are further investigated. The results show that the devices parallel to the source leakage electrode friction have the optimal gas sensing performance. The responsivity and response time of the devices are 1.3% and 70 s.3respectively in the NO2 atmosphere of 2 ppm. Effect of tribological orientation of active layer on gas sensing characteristics of pentaben OFET devices based on PMMA/PS double dielectric layer. Based on the preparation of high performance PMMA/PS double-layer dielectric layer devices, the active layer of OFET devices is tribalized by nylon brushes. The friction directions include vertical, oblique and parallel to the source and leakage electrodes. The mobility of the devices perpendicular to the source leakage electrode friction is 0.46 cm ~ 2 / V _ s, and the on-state current is 60.4 渭 A, which is 2 times and 1.5 times higher than that of the untreated devices, respectively. In addition, the devices parallel to the source leakage electrode friction have the optimal gas sensing performance, the responsivity and the response time reach 1.1% and about 50 s in the NO2 atmosphere of 2 ppm, respectively. Compared with PS single dielectric layer devices, PMMA / PS double dielectric layer devices with or without tribological treatment have better electrical and gas sensing properties. Finally, based on the gas sensing mechanism and carrier transport theory, the causes of different effects of friction orientation on the gas sensing performance of OFET devices are analyzed.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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