微波宽带低噪声放大器的设计与实现

发布时间：2018-05-27 04:46

本文选题：低噪声放大器 + 宽带阻抗匹配　；参考：《安徽大学》2015年硕士论文

【摘要】：在当今的信息社会里,无处不在的通信网络就像空气一样存在于我们周围,成为了现代生活中不可或缺的重要组成部分。而在蓬勃发展的通信技术中,宽带/超宽带通信技术以其大容量、高速率的优点而为人们所重视。在宽带/超宽带通信接收机中,低噪声放大器(Low Noise Amplifier, LNA)是一个关键的组成部件,LNA位于接收机的前端,其性能好坏直接决定了系统的接收灵敏度和整机的噪声系数,因此对宽带/超宽带低噪声放大器的研究是宽带通信技术研究领域中的重要研究内容。本论文的主要内容是设计和实现微波宽带/超宽带低噪声放大器。文章首先阐述和分析了微波宽带低噪声放大器的基础理论和设计方法,理论部分主要涉及了传输线理论、二端口网络的噪声分析以及晶体管的噪声特性等,而在设计方法上,则重点阐述了基于噪声最优源阻抗匹配的放大器选取方法、基于栅漏寄生电容负反馈的宽带阻抗匹配设计方法等内容,为后续的微波宽带低噪声放大器的设计提供了理论和方法支撑。本文的第三章针对超宽带(UWB)通信系统,设计了一款3.1-10.6GHz的宽带低噪声放大器,该放大器采用台湾稳懋商用0.15um pHEMT工艺设计,在设计方法上充分利用了晶体管的本征栅漏寄生电容来拓展LNA的工作带宽,最终该LNA在仿真上实现了大于15dB的增益和小于1.8dB的噪声系数以及较好的输入输出回波损耗性能,充分证明了该设计方法的有效性。本文的第四章针对ISM多频段通信系统的要求,设计和实现了一款50MHz-1.8GHz的HMIC超宽带低噪声放大器,该放大器利用了分立的商用ATF放大晶体管在PCB板上设计实现,在设计上采用了一种改进了的Kukielka放大器结构,测试结果表明该放大器在工作频段内具有大于26dB的增益和小于1.4dB的噪声系数,达到了设计目标,同时也验证了该LNA在设计理念和方法上的正确性。本论文针对UWB通信系统和ISM多频段通信设计和实现了两款微波宽带低噪声放大器,两款低噪声放大器均采用了新颖的设计理念和方法,性能则达到了预期的设计指标,其设计实现过程和结果对宽带低噪声放大器的研究具有借鉴和参考意义。
[Abstract]:In today's information society, ubiquitous communication networks exist around us like air and become an indispensable part of modern life. In the flourishing communication technology, broadband / UWB communication technology is valued for its large capacity and high speed. In broadband / UWB communication, broadband / UWB communication has been paid more attention to. In the receiver, Low Noise Amplifier (LNA) is a key component. LNA is located at the front end of the receiver. Its performance directly determines the receiving sensitivity of the system and the noise factor of the whole machine. Therefore, the research on broadband / ultra wideband low noise amplifier is an important research in the research field of broadband communication technology. The main content of this paper is to design and implement microwave broadband / ultra wideband low noise amplifier. Firstly, the basic theory and design method of microwave broadband low noise amplifier are expounded and analyzed. The theoretical part mainly involves the transmission line theory, the noise analysis of two port networks and the noise characteristics of the transistors. In the method, the selection method of the amplifier based on the optimal source impedance of the noise, the design method of the broadband impedance matching based on the negative feedback of the gate leakage parasitic capacitance, and so on, provide the theoretical and method support for the subsequent design of the microwave broadband low noise amplifier. The third chapter of this paper is aimed at the ultra wideband (UWB) communication system, A 3.1-10.6GHz broadband low noise amplifier is designed. The amplifier uses the commercial 0.15um pHEMT process design of Taiwan maw. In the design method, the intrinsic gate leakage parasitic capacitance of the transistor is fully utilized to expand the working bandwidth of the LNA. Finally, the LNA has achieved a larger than 15dB gain and a noise coefficient of less than 1.8dB in the simulation. The fourth chapter of this paper designs and implements a 50MHz-1.8GHz HMIC ultra wideband low noise amplifier for the requirements of the ISM multiband communication system. The amplifier uses a discrete commercial ATF amplifier to design and implement the PCB board on the PCB board. A modified Kukielka amplifier structure is adopted. The test results show that the amplifier has a gain of greater than 26dB in the working frequency band and the noise coefficient less than 1.4dB, and the design goal is achieved. At the same time, the correctness of the design concept and method of the LNA is verified. This paper aims at the UWB communication system and the ISM multiband communication. Two microwave broadband low noise amplifiers are designed and implemented. All two low noise amplifiers have adopted new design concepts and methods, and their performance reaches the expected design targets. The design and implementation process and results are of reference and reference significance for the research of broadband low noise amplifier.
【学位授予单位】：安徽大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.3

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