PIN二极管限幅器的瞬态电热耦合分析

发布时间：2018-06-28 03:51

本文选题：PIN二极管 + 数值分析　；参考：《南京理工大学》2015年硕士论文

【摘要】：在未来的高科技战争中,信息的控制权将变得越来越重要,因此通信系统将会成为高功率微波武器攻击的重点。PIN二极管作为通信系统接收机前端限幅电路中的重要元件,比较容易受到高功率电磁脉冲的攻击,因此分析PIN二极管瞬态物理特性,对了解PIN二极管的毁伤机理、加强雷达接收机的电磁防护具有重要的意义。本论文采用数值模型对PIN二极管进行了模拟,数值模型相比于解析模型更适合深入分析半导体器件内部物理量的分布。文章首先基于半导体漂移-扩散方程组和热传导方程,利用时域谱元法(SETD)推导出PIN二极管瞬态电热特性求解方程,通过算例验证了了PIN二极管正向导通、反向截止的特性,计算了PIN二极管内部温度分布,并且分析了正弦波作用下PIN二极管内部载流子的运动情况。接着论文介绍了半导体器件二次击穿的物理机理,阐述了计算大电压作用下PIN二极管电热特性的电热耦合分析方法。利用电热耦合方法分析了电磁脉冲对PIN二极管的电流模式破坏,通过分析,确立了在电流模式破坏的过程中‘,PIN二极管经历的不同阶段,并且发现在反向大电压的作用下,PIN二极管P区和N区处比较容易受到热损伤。最后,论文中将PIN管数值分析方法与基尔霍夫电流定律、电压定律理论相结合,运用牛顿迭代方法计算了不同幅度高功率正弦波作用下PIN管限幅电路的输出电压,分析了电路中PIN二极管内部载流子的运动情况,研究了PIN限幅电路输出电压尖峰泄漏持续时间,发现双管限幅器相较于单管限幅器,输出电压尖峰泄漏功率更小。并且高功率微波对限幅器电路中PIN二极管的损伤也得到了分析。
[Abstract]:In the future high-tech war, the control of information will become more and more important, so the communication system will become the focus of high-power microwave weapon attack. PIN diode will be an important component in the front-end limiting circuit of the communication system receiver. It is easy to be attacked by high power electromagnetic pulse, so it is of great significance to analyze the transient physical characteristics of PIN diode and to understand the damage mechanism of PIN diode and strengthen the electromagnetic protection of radar receiver. In this paper, the PIN diode is simulated with a numerical model. Compared with the analytical model, the numerical model is more suitable for the in-depth analysis of the distribution of physical quantities in semiconductor devices. Based on the drift diffusion equations and heat conduction equations, the transient electrothermal properties of PIN diodes are derived by using the time domain spectral element method (SETD). The forward and reverse cutoff characteristics of the PIN diodes are verified by an example. The internal temperature distribution of PIN diodes is calculated, and the motion of carriers in PIN diodes under the action of sine wave is analyzed. Then, the physical mechanism of secondary breakdown of semiconductor devices is introduced, and the electrothermal coupling analysis method for calculating the electrothermal characteristics of PIN diodes under the action of large voltage is described. The electrothermal coupling method is used to analyze the current-mode damage of PIN diode caused by electromagnetic pulse. Through the analysis, the different stages of PIN diode in the process of current mode failure are established. It is found that the P and N regions of PIN diodes are vulnerable to thermal damage under the action of high reverse voltage. Finally, the PIN tube numerical analysis method is combined with Kirchhoff's current law and voltage law theory, and the output voltage of PIN tube limiting circuit under different amplitude and high power sinusoidal wave is calculated by Newton iteration method. The movement of carriers in PIN diode is analyzed. The leakage duration of output voltage spike in PIN limiter is studied. It is found that the leakage power of output voltage spike is smaller than that of single transistor limiter. The damage of PIN diode in limiter circuit by high power microwave is also analyzed.
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN312.4

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