基于CMOS工艺的抗辐射加固光电探测芯片设计

发布时间：2018-07-04 06:37

本文选题：光电探测芯片 + 光探测器　；参考：《电子科技大学》2015年硕士论文

【摘要】：现场总线技术将工业现场中的各种设备通过串行通信的方式连接在一起,这使得地线构成接地环路。接地环路会感应外界干扰,影响信号传输甚至损坏设备。高速数字光电耦合器把输入电信号转换为光信号,再把光信号转换为输出电信号,从而实现了输入、输出完全电气隔离,同时不影响信号的传输,因而成为这类系统中理想的隔离器件。目前市场上的高速数字光耦大多属于进口。因此,开发一款自主设计的高速数字光电耦合器有着重要的研发意义和广阔的市场前景。另外,高速数字光电耦合器也广泛用于军事和航天领域。在此类应用环境下,光电耦合器面临各种辐射效应的威胁,容易受到损伤,导致可靠性降低、使用寿命缩短,甚至完全失效。因此,具有抗辐照能力的高速数字光电耦合器更具吸引力。高速数字光电耦合器由高速LED与光电探测芯片组成。光电探测芯片是其核心模块,性能好坏直接决定了光电耦合器的数据传输质量。因此,设计一款具有抗辐照能力的高速数字光电耦合器的核心,就是设计抗辐照加固光电探测芯片。本文介绍了高速数字光电耦合器数据传输基本理论、各个主要模块原理,以及抗辐照加固设计方法等。在此基础上,首先设计了一款用于10MBd光电耦合器具有抗辐照能力的光电探测芯片。而后采用均衡器技术和差分光探测器技术,又设计了两款用于30MBd传输速率光电耦合器的光电探测芯片。论文重点论述了利用Matlab工具和Verilog-A语言建立光探测器小信号模型的方法;在工艺厂商提供的标准工艺库基础上快速建立环栅MOS单元库的方法;通过局部负反馈扩展带宽的跨阻放大器结构;利用sisotool工具确定均衡器参数的方法等。最终,10MBd抗辐照光电探测芯片使光电耦合器输入高电流范围2~6mA,静态电流4.2mA。负载电阻350?、电容15pF时,输出高、低电平传播延迟分别为39ns和36ns,脉宽失真小于15ns。环栅MOS和DTMOS加固等措施使芯片抗辐照能力有所提升。采用均衡器技术的30MBd光电探测芯片使光电耦合器输入高电流范围2~6mA,静态电流4.9mA。输出高、低电平传播延迟分别为21ns和20ns,脉宽失真小于15ns。采用差分光探测器的30MBd光电探测芯片使光电耦合器输入高电流范围6~18mA,静态电流3.7mA。输出高、低电平传播延迟分别为23ns和16ns,脉宽失真小于30ns。
[Abstract]:The technology of fieldbus connects all kinds of equipments in industrial field by serial communication, which makes ground wire form earthing loop. Earthing loop will induce external interference, affect signal transmission and even damage equipment. The high-speed digital photocoupler converts the input signal into the optical signal, and then converts the optical signal into the output signal, thus realizing the complete electrical isolation of the input and output without affecting the transmission of the signal. Therefore, it is an ideal isolating device in this kind of system. At present, the high-speed digital coupling on the market is mostly imported. Therefore, the development of a self-designed high-speed digital photocoupler has important research and development significance and broad market prospects. In addition, high-speed digital photocouplers are also widely used in military and aerospace fields. In this kind of application environment, the photocoupler is threatened by various radiation effects and is vulnerable to damage, which leads to the reduction of reliability, the shortening of service life, and even the complete failure. Therefore, the high-speed digital photocoupler with anti-radiation ability is more attractive. High-speed digital photocoupler is composed of high-speed LED and photoelectric detection chip. Photoelectric detection chip is its core module, and its performance directly determines the data transmission quality of photocoupler. Therefore, the core of designing a high speed digital photocoupler with anti-irradiation ability is to design an anti-irradiation and strengthening photodetector chip. This paper introduces the basic theory of high-speed digital photocoupler data transmission, the principle of each main module, and the design method of anti-irradiation reinforcement. On this basis, a photodetector chip for 10 MBd photocoupler is designed. Then using equalizer technology and differential photodetector technology, two photoelectric detection chips for 30 MBd transmission rate photocoupler are designed. In this paper, the method of establishing the small signal model of photodetector with Matlab and Verilog-A language is discussed, and the method of establishing the MOS cell library of ring gate based on the standard process library provided by the process manufacturer is discussed. The structure of transresistance amplifier is extended by local negative feedback, and the method of determining the parameters of equalizer by using sisotool tool is presented. Finally, the 10MBd anti-irradiation photodetector chip makes the photocoupler input the high current range of 2mA2mAand the static current of 4.2mA. When the load resistance is 350 nm and the capacitance is 15pF, the propagation delay of high output and low level are 39ns and 36ns, respectively, and the pulse width distortion is less than 15ns. The ring gate MOS and DTMOS reinforcement can improve the radiation resistance of the chip. The 30 MBd photoelectric detection chip using equalizer technology makes the optocoupler input high current range of 2 ~ 6 Ma and static current of 4.9 Ma. The high and low level propagation delays are 21ns and 20ns, respectively, and the pulse width distortion is less than 15ns. The 30 MBd photodetector chip of differential photodetector makes the optocoupler input high current range of 6 ~ 18 Ma and static current of 3.7 Ma. The high and low level propagation delays are 23ns and 16ns, respectively, and the pulse width distortion is less than 30ns.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN402

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