紫外光照射下GaN的电化学性质及CMP应用

发布时间：2018-07-04 07:48

本文选题：电化学腐蚀 + GaN　；参考：《微纳电子技术》2017年12期

【摘要】：通过电化学工作站对2英寸(1英寸=2.54 cm)n型GaN晶圆进行了研究,结合X62型单面抛光机研究GaN电化学腐蚀与化学机械抛光(CMP)的一致性,并利用原子力显微镜(AFM)检测抛光后晶片的表面形貌。结果表明:采用H_2O_2和NaClO作为氧化剂时,GaN的腐蚀速率与氧化剂的体积分数呈反比,在固定H2O2体积分数的情况下,GaN腐蚀速率呈现酸性溶液优于碱性溶液、同时二者均优于中性溶液的现象。使用X62型单面抛光机对上述电化学腐蚀结果进行验证,得到与其相一致的规律,在体积分数为1%的H_2O_2和pH=5的情况下,GaN的去除速率最高,达到380.3 nm/h,同时抛光后的GaN表面粗糙度达到0.063 nm,扫描范围为5μm×5μm。研究表明电化学腐蚀和化学机械抛光具有一定的一致性,在实际应用中具有一定的借鉴意义。
[Abstract]:Two inch (1 inch or 2.54 cm) n) gan wafers were studied by electrochemical workstation, and the consistency between electrochemical corrosion and chemical mechanical polishing (CMP) was studied with X62 single-sided polishing machine. Atomic force microscopy (AFM) was used to detect the surface morphology of polished wafer. The results show that the corrosion rate of GaN is inversely proportional to the volume fraction of oxidant when H _ 2O _ 2 and NaClO are used as oxidant, and the corrosion rate of gan is better than that of alkaline solution when H _ 2O _ 2 is fixed. At the same time, both of them are superior to the phenomenon of neutral solution. The results of electrochemical corrosion were verified by using X62 single side polishing machine. The results were consistent with the results. The removal rate of gan was the highest at 1% H _ 2O _ 2 and pH ~ (5) by volume fraction. The surface roughness of the polished gan is 0.063 nm and the scanning range is 5 渭 m 脳 5 渭 m. The results show that electrochemical corrosion and chemical-mechanical polishing are consistent, and can be used for reference in practical application.
【作者单位】：河北工业大学电子信息工程学院;天津市电子材料与器件重点实验室;
【基金】：河北省高层次人才资助项目百人计划项目(E2013100006) 河北省科技计划资助项目(15211017D)
【分类号】：TN304.2

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