IGBT功率模块结温探测和寿命预测

发布时间：2018-07-14 22:12

【摘要】：绝缘栅双极型晶体管作为功率开关器件,具有载流密度大、饱和压降低等许多优点,已广泛应用于新能源发电、高压输电等诸多关键领域中。IGBT功率模块工作环境恶劣,导致器件疲劳老化。如电流强度大、电压等级高、工作期间开关频率很高,这些都给器件的可靠性带来隐患。通过长期研究和工作的经验,大约55%的失效原因是因为器件工作时的电压、电流、开关频率较高,导致器件的结温升高,而结温升高间接加速模块的老化程度,当结温达到一定的高度时,器件的疲劳程度会呈现几何级数上升趋势,从而加速失效。因此研究IGBT功率模块结温与其寿命的关系,可以降低系统失效率,提高系统可靠性。本文以IGBT功率模块为研究对象,在模块电热建模、结温评估、寿命预测等方面展开研究。首先,简要介绍了IGBT功率模块的基本结构和运行原理,详细归纳和分析了IGBT功率模块失效原因和失效形式,将失效原因归为物理和电气两类原因。其次,根据结温测量原理,充分借鉴现有模型建立IGBT功率模块电热模型,该模型能够反映器件功率损耗与结温上升之间的关系,是一个电热耦合过程,需要建立电热联合仿真模型。本文详细讨论了如何建立IGBT功率模块的电仿真模型和热仿真模型。再次,基于MATLAB/Simulink软件,搭建起IGBT功率模块的电仿真模型、热仿真模型,仿真模块实际工作时的电热耦合过程,将电流、电压作为仿真变量,仿真得到IGBT功率模块的结温和壳温。最后,通过分析研究表明,IGBT功率模块的寿命与结温有着密切的关系,预测模块的寿命可以将结温作为变量,采用寿命预测数学模型得到模块正常工作情况下的寿命。
[Abstract]:As power switch devices, insulated gate bipolar transistor (IGBT) has been widely used in many key fields, such as new energy generation, high voltage transmission and so on, because of its high current density and low saturation voltage. Causes the device fatigue aging. Such as high current intensity, high voltage level and high switching frequency during operation, all of these bring hidden trouble to the reliability of the device. Through long-term research and working experience, about 55% of the failure reasons are due to the high voltage, current and switching frequency of the device, which leads to the increase of the junction temperature of the device, while the increase of the junction temperature indirectly accelerates the aging degree of the module. When the junction temperature reaches a certain height, the fatigue degree of the device will show a geometric progression upward trend, thus accelerating the failure. Therefore, the study of the relationship between the junction temperature of IGBT power module and its lifetime can reduce the failure rate of the system and improve the reliability of the system. In this paper, the IGBT power module is taken as the research object, in the aspects of module electrothermal modeling, junction temperature evaluation, life prediction and so on. Firstly, the basic structure and operation principle of IGBT power module are briefly introduced, the failure reasons and failure forms of IGBT power module are summarized and analyzed in detail, and the failure reasons are classified into physical and electrical causes. Secondly, according to the principle of junction temperature measurement, an electrothermal model of IGBT power module is established based on the existing model. The model can reflect the relationship between device power loss and junction temperature rise, and it is an electrothermal coupling process. It is necessary to establish a joint electrothermal simulation model. This paper discusses in detail how to establish the electrical simulation model and thermal simulation model of IGBT power module. Thirdly, based on MATLAB / Simulink software, the electrical simulation model, thermal simulation model and electrothermal coupling process of IGBT power module are built. The current and voltage are taken as simulation variables, and the junction and shell temperature of IGBT power module are obtained by simulation. Finally, it is shown that the life of IGBT power module is closely related to the junction temperature. The life of IGBT power module can be predicted by taking junction temperature as a variable, and the life of the module under normal working condition can be obtained by using the life prediction mathematical model.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8

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