神经信号读取用生物敏场效应管的设计与仿真
发布时间：2018-07-22 11:22
【摘要】：场效应晶体管在微电子领域,其结构和制作工艺,都有显著的特点,是集成芯片的基本组成单元。将它应用于生物电生理特性的研究,早在上个世纪六十年代就开始了。本文对神经信号读取场效应管的工艺仿真和器件模型仿真做了初步尝试,完成的主要工作有以下内容:首先,深入研究神经信号读取场效应晶体管工作原理,依据传统场效应管的基本特性,分析了生物敏场效应管的特性,参照离子敏场效应管的结构,建立了“电解质—传感器介质层—金属—器件栅介质—导电沟道”的生物敏场效应晶体管整体器件模型;其次,改进传统场效应晶体管的结构,引入“微井”结构,增强神经元与生物敏场效应管之间连接紧密度,以期实现选择性的激励和测量神经元细胞的电信号;再者,根据所设计的器件的结构,采用CMOS工艺,利用Silvaco来进行整个工艺流程的仿真,在抽取出器件工艺参数后,对所得到的器件进行基本特性的仿真。在本论文中,主要对神经信号读取场效应管的PMOS管以及后端工艺进行了仿真。在PMOS的工艺仿真流程中,借助Silvaco的Athena模块,我们可以提取仿真所得的PMOS的许多参数出来,主要参数包括源/漏极结深,阈值电压,栅氧化层的厚度,源/漏极方块电阻,LDD方块电阻等。利用Silvaco的Utmost模块,我们提取出所建立的MOS的BSIM3模型出来,为后面建立的等效电路中的MOS管提供模型参数,同样也为后续的放大电路的设计提供了技术指标及要求。
[Abstract]:In the field of microelectronics, the structure and fabrication process of field-effect transistors (FET) have remarkable characteristics, and they are the basic components of integrated chips. The application of it to the study of bioelectrophysiological properties began in the 1960 s. In this paper, the process simulation of neural signal reading FET and the device model simulation are made a preliminary attempt. The main work accomplished is as follows: firstly, the principle of neural signal reading FET is deeply studied. According to the basic characteristics of the conventional FET, the characteristics of the biosensitive FET are analyzed, and the structure of the ion-sensitive FET is referred to. The whole device model of biosensitive field-effect transistor (FET) with "electrolyte-sensor dielectric layer, metal-device gate dielectric-conductive channel" is established. Secondly, the structure of traditional FET is improved and the "microwell" structure is introduced. Enhance the tightness of the connection between the neuron and the biosensitive FET in order to achieve selective excitation and measurement of the electrical signals of the neuronal cell; furthermore, according to the structure of the device designed, the CMOS process is used. Silvaco is used to simulate the whole process. After extracting the process parameters of the device, the basic characteristics of the device are simulated. In this thesis, the PMOS and back-end process of neural signal reading FET are simulated. In the process simulation of PMOS, with the help of Silvaco's Athena module, we can extract many parameters from the simulation. The main parameters include source / drain junction depth, threshold voltage, thickness of gate oxide, etc. Source / drain block resistance LDD block resistance etc. Using the most module of Silvaco, we extract the BSIM3 model of MOS, which provides the model parameters for the MOS transistor in the subsequent equivalent circuit, and also provides the technical specifications and requirements for the subsequent design of the amplifier circuit.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
本文编号：2137279
[Abstract]:In the field of microelectronics, the structure and fabrication process of field-effect transistors (FET) have remarkable characteristics, and they are the basic components of integrated chips. The application of it to the study of bioelectrophysiological properties began in the 1960 s. In this paper, the process simulation of neural signal reading FET and the device model simulation are made a preliminary attempt. The main work accomplished is as follows: firstly, the principle of neural signal reading FET is deeply studied. According to the basic characteristics of the conventional FET, the characteristics of the biosensitive FET are analyzed, and the structure of the ion-sensitive FET is referred to. The whole device model of biosensitive field-effect transistor (FET) with "electrolyte-sensor dielectric layer, metal-device gate dielectric-conductive channel" is established. Secondly, the structure of traditional FET is improved and the "microwell" structure is introduced. Enhance the tightness of the connection between the neuron and the biosensitive FET in order to achieve selective excitation and measurement of the electrical signals of the neuronal cell; furthermore, according to the structure of the device designed, the CMOS process is used. Silvaco is used to simulate the whole process. After extracting the process parameters of the device, the basic characteristics of the device are simulated. In this thesis, the PMOS and back-end process of neural signal reading FET are simulated. In the process simulation of PMOS, with the help of Silvaco's Athena module, we can extract many parameters from the simulation. The main parameters include source / drain junction depth, threshold voltage, thickness of gate oxide, etc. Source / drain block resistance LDD block resistance etc. Using the most module of Silvaco, we extract the BSIM3 model of MOS, which provides the model parameters for the MOS transistor in the subsequent equivalent circuit, and also provides the technical specifications and requirements for the subsequent design of the amplifier circuit.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
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