新型有机小分子场效应晶体管器件的制备及性能研究

发布时间：2018-08-01 16:37

【摘要】：近年来,有机电子学作为一门新兴的重要研究领域,取得了迅猛的发展。而有机场效应晶体管作为电子电路的主要组成部分,可广泛应用于传感器、电子纸、射频识别标签等,另一方面,虽然目前已经对有机场效应晶体管的分子设计和电荷传输做出了一些预测,但对其电荷传输机理仍然不是很清楚,有机半导体材料的化学结构、聚集结构与性能间的关系仍不是很明朗。因此,发展新的有机半导体材料以及器件制备方法对于推进有机场效应晶体管的研究具有重要的科学意义。本论文围绕三类新型的有机半导体材料,开展了薄膜和单晶场效应晶体管的制备与研究工作。主要工作包括以下三个方面:1.测试了二维含硫星型有机半导体材料BTBTT的物理、化学性质,然后通过真空蒸镀法制备了其薄膜有机场效应晶体管。用物理气相传输法培养了化合物BTBTT的单晶微米带,并制备了单晶器件,对其有机场效应晶体管性能进行了研究。结果表明其薄膜场效应晶体管迁移率最高在2.46x10-2 cm2/Vs,而单晶场效应晶体管迁移率可达0.56 cm2/Vs。2.通过真空蒸镀法制备了一个同时具有中心对称和轴对称二维稠环化合物4TBT的薄膜场效应晶体管器件。测试结果显示:基底温度对器件性能有很大的影响,其最高迁移率在Tsub=45℃时获得,为1.41x10-2 cm2/Vs。3.通过真空蒸镀法在不同基底温度下蒸镀了全对称二维稠环化合物4BTTT薄膜,然后经过铜网掩模蒸镀金电极得到其薄膜场效应晶体管器件,测试结果显示:基底温度不同对器件性能影响很大,说明改变基底温度可以影响分子在衬底上的堆积排列,进而影响其性能,在Tsub=60℃时达到最大值,其迁移率最高在达2.03x10-3 cm2/Vs。
[Abstract]:In recent years, organic electronics has developed rapidly as a new and important research field. As the main component of electronic circuits, the airport effect transistor is widely used in sensors, electronic paper, RFID tags and so on. On the other hand, although the molecular design and charge of the airport effect transistors have been made before the eyes have been used. Some predictions are made, but the mechanism of the charge transfer is still not clear. The relationship between the chemical structure of the organic semiconductor materials, the structure of the aggregation and the performance is still not clear. Therefore, the development of new organic semiconductor materials and device preparation methods have important scientific meaning for the research of the development of the airport effect transistor. In this paper, the preparation and research work of thin film and single crystal field effect transistors are carried out around three new types of organic semiconductor materials. The main work includes the following three aspects: 1. test the physical and chemical properties of the two-dimensional sulfur star type organic semiconductor material BTBTT, and then pass the vacuum evaporation method to prepare the film with the airport effect. The single crystal microstrip of compound BTBTT was cultured with physical gas transmission method, and the single crystal device was prepared. The performance of the airport effect transistor was studied. The results showed that the mobility of the thin film field effect transistor was highest at 2.46x10-2 cm2/Vs, and the crystal field effect crystal transfer rate could reach 0.56 cm2/Vs.2. through vacuum evaporation. A thin film field effect transistor (FET) device with both central symmetry and axisymmetric two-dimensional thick ring compound 4TBT was prepared by plating. The test results showed that the substrate temperature had a great influence on the performance of the device. The maximum transfer rate was obtained at Tsub=45 C, and the 1.41x10-2 cm2/Vs.3. through vacuum evaporation was evaporated at different substrate temperatures. The full symmetric two-dimensional thick ring compound 4BTTT film is then obtained by the copper mesh mask steamed gold plating electrode. The test results show that the temperature of the substrate has a great influence on the performance of the device. It shows that the change of the substrate temperature can affect the stacking of the molecules on the substrate, and then affects its performance, at the time of Tsub=60 C The maximum mobility is up to 2.03x10-3 cm2/Vs..
【学位授予单位】：杭州师范大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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