宽禁带氧化物紫外光电探测器的制备与光电性能研究
发布时间：2018-08-06 19:56
【摘要】：在我们的日常生活中,紫外线无处不在。紫外光电探测器一方面可以为紫外线的调控做出参考,例如在涂料固化机、医疗床、消毒柜中的应用;另一方面可以作为探测器或者预警器,例如在军事、宇航、臭氧层保护、火灾预警中的应用。紫外光电探测器分为真空紫外探测器(主要指光电倍增管)和固态紫外探测器(主要指半导体光电二极管)。由于固态紫外探测器与真空紫外探测器相比,具有不易破损、体积小、能耗低、效率高、利于集成等优点,所以固态紫外探测器成为紫外探测器的研究热点。传统的固态紫外探测器材料有半导体硅、化合物砷化镓、磷化铟等等,然而由于这些材料禁带宽度较小,工作温度较低,基于它们制备的紫外光电探测器在应用上受到很多限制。近些年,新型宽禁带紫外光电材料的发展使得制备抗高温,抗辐射,高功率以及高度集成的紫外光电探测器成为可能。现在紫外光电探测器的主要研究方向有两个方面:一、完善已有的宽禁带紫外光电材料,提高其紫外光电探测器性能;二、发现新的宽禁带材料,开发其在紫外光电探测器领域中的应用。本论文的工作包括两个方面:一是基于氧化镓纳米线的紫外光电探测器的制备和研究;二是基于(LaAlO_3)_(0.3)-(SrAl_(0.5)Ta_(0.5)O)3)_(0.7)(LSAT)的紫外光电探测器的制备和研究。在氧化镓纳米线紫外光电探测器的研究中,我们用溶液旋涂法代替了传统的贵金属薄膜加热退火的方法,降低了制备样品的能耗,同时提高了效率。其次,鉴于Au颗粒在氧化镓纳米线生长过程中不可缺失的重要性,和在扫描电镜中纳米线头部没有观察到金颗粒存在,我们提出氧化镓纳米线CVD生长是基于气液固和气固混合模式。然后,我们在氧化镓纳米线网络上制备了叉指电极,测试了其光电性能,该光电探测器具有光电灵敏度高、噪声低、响应时间快等优良性能,这说明氧化镓纳米线作为一种宽禁带紫外光电探测器材料,具有很好的应用前景。在(LaAlO_3)_(0.3)-(SrAl_(0.5)Ta_(0.5)O)3)_(0.7)(LSAT)单晶紫外光电探测器的研究中,通过微加工技术制备了基于LSAT的紫外光电探测器,并对该探测器做了一系列光电性能测量,测试结果表明,该探测器具有良好的日盲特性和超快的时间响应特性。此外还通过多个光电单元并联,增加了光电探测器的探测率。
[Abstract]:Ultraviolet rays are everywhere in our daily life. UV photodetectors can, on the one hand, provide references for the regulation of ultraviolet rays, such as applications in paint curing machines, medical beds, and sterilizing cabinets; on the other hand, they can be used as detectors or early warning devices, such as in military, aerospace, and ozone layer protection. The application of fire warning. UV detector is divided into vacuum ultraviolet detector (mainly refers to photomultiplier tube) and solid state ultraviolet detector (semiconductor photodiode). Compared with the vacuum UV detector, solid-state UV detector has many advantages, such as easy damage, small volume, low energy consumption, high efficiency and good integration, so solid-state UV detector has become the research hotspot of UV detector. Traditional solid-state UV detector materials include semiconductor silicon, compound gallium arsenide, indium phosphide and so on. However, due to the smaller bandgap and lower operating temperature of these materials, The UV photodetectors based on them are limited in application. In recent years, the development of new wide bandgap ultraviolet photoelectric materials makes it possible to prepare high-temperature, radiation-resistant, high-power and highly integrated UV photodetectors. At present, the main research directions of UV photodetectors are as follows: first, to improve the existing wide band forbidden ultraviolet photoelectric materials and to improve the performance of UV photodetectors; second, to discover new wide band gap materials. Develop its application in the field of ultraviolet photoelectricity detector. The work of this thesis includes two aspects: first, the preparation and research of UV photodetectors based on gallium oxide nanowires, and second, the preparation and study of ultraviolet photodetectors based on (LaAlO_3) _ (0.3-) (SrAl_ (0.5) Ta _ (0.5) O) _ (0.7) (LSAT). In the study of ultraviolet photodetectors of gallium oxide nanowires, the solution spin-coating method is used to replace the traditional heating annealing method of noble metal thin films, which reduces the energy consumption and improves the efficiency of sample preparation. Secondly, in view of the importance of au particles in the growth of gan nanowires, and the absence of gold particles in the head of the nanowires in SEM, We propose that Gallium oxide nanowires CVD growth is based on gas-liquid-solid and gas-solid mixing mode. Then, we prepared interDigital electrode on Gallium oxide nanowire network and tested its photoelectric performance. The photodetector has high photoelectric sensitivity, low noise, fast response time and so on. This shows that gallium oxide nanowires as a wide band gap ultraviolet photodetector materials have a good application prospects. In the study of (LaAlO_3) _ (0.3- (SrAl0.5) Ta0.5) O) _ (0.7) (LSAT) single crystal UV photodetector), the UV photodetector based on LSAT has been fabricated by microfabrication technique, and a series of photoelectric properties of the detector have been measured. The results show that, The detector has good solar blindness and super fast time response. In addition, the detection rate of the photodetector is increased by parallel connection of several photoelectric units.
【学位授予单位】：中国地质大学(北京)
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN23
本文编号：2168826
[Abstract]:Ultraviolet rays are everywhere in our daily life. UV photodetectors can, on the one hand, provide references for the regulation of ultraviolet rays, such as applications in paint curing machines, medical beds, and sterilizing cabinets; on the other hand, they can be used as detectors or early warning devices, such as in military, aerospace, and ozone layer protection. The application of fire warning. UV detector is divided into vacuum ultraviolet detector (mainly refers to photomultiplier tube) and solid state ultraviolet detector (semiconductor photodiode). Compared with the vacuum UV detector, solid-state UV detector has many advantages, such as easy damage, small volume, low energy consumption, high efficiency and good integration, so solid-state UV detector has become the research hotspot of UV detector. Traditional solid-state UV detector materials include semiconductor silicon, compound gallium arsenide, indium phosphide and so on. However, due to the smaller bandgap and lower operating temperature of these materials, The UV photodetectors based on them are limited in application. In recent years, the development of new wide bandgap ultraviolet photoelectric materials makes it possible to prepare high-temperature, radiation-resistant, high-power and highly integrated UV photodetectors. At present, the main research directions of UV photodetectors are as follows: first, to improve the existing wide band forbidden ultraviolet photoelectric materials and to improve the performance of UV photodetectors; second, to discover new wide band gap materials. Develop its application in the field of ultraviolet photoelectricity detector. The work of this thesis includes two aspects: first, the preparation and research of UV photodetectors based on gallium oxide nanowires, and second, the preparation and study of ultraviolet photodetectors based on (LaAlO_3) _ (0.3-) (SrAl_ (0.5) Ta _ (0.5) O) _ (0.7) (LSAT). In the study of ultraviolet photodetectors of gallium oxide nanowires, the solution spin-coating method is used to replace the traditional heating annealing method of noble metal thin films, which reduces the energy consumption and improves the efficiency of sample preparation. Secondly, in view of the importance of au particles in the growth of gan nanowires, and the absence of gold particles in the head of the nanowires in SEM, We propose that Gallium oxide nanowires CVD growth is based on gas-liquid-solid and gas-solid mixing mode. Then, we prepared interDigital electrode on Gallium oxide nanowire network and tested its photoelectric performance. The photodetector has high photoelectric sensitivity, low noise, fast response time and so on. This shows that gallium oxide nanowires as a wide band gap ultraviolet photodetector materials have a good application prospects. In the study of (LaAlO_3) _ (0.3- (SrAl0.5) Ta0.5) O) _ (0.7) (LSAT) single crystal UV photodetector), the UV photodetector based on LSAT has been fabricated by microfabrication technique, and a series of photoelectric properties of the detector have been measured. The results show that, The detector has good solar blindness and super fast time response. In addition, the detection rate of the photodetector is increased by parallel connection of several photoelectric units.
【学位授予单位】：中国地质大学(北京)
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN23
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