硅基微环谐振器传输特性的研究

发布时间：2018-09-06 15:52

【摘要】：微电子集成技术经过半世纪的发展,所遵循的摩尔定律已接近极限,进一步发展遇到瓶颈,亟需技术突破。而"硅”这种制造大规模集成电路的半导体材料在电学特性研究和制造工艺改进领域已经非常完善,很难实现技术突破。近年来硅基光子学的研究成果表明硅和硅基作为一种新型的光子材料除本身优良的电学特性外也展现出了良好的光学特性,并在实验室中初步实现了硅和硅基材料中光的产生、传输、调控、互连和探测等一系列功能。作为目前最具潜力的光电子集成方案之一,硅基光电子集成技术是继微电子集成技术之后的又一革命性技术,对于建设和实现未来信息化社会具有巨大的经济和战略意义。硅基微环谐振器作为硅基光电子集成系统中的核心调制器件具有结构尺寸小、集成度高、成本低等优点,通过其谐振特性结合硅材料的热光效应、等离子色散效应、量子限制斯塔克效应可在硅基集成系统中实现高速调制器、高速光开和可调谐滤波器等功能,是目前硅基器件中应用最为广泛的器件之一,极具研究价值。因此本论文对硅基微环谐振器的传输特性进行了深入研究,主要工作如下：(1)通过耦合模理论(CMT)推导出了二维情况下硅基微环谐振器的耦合系数,并通过数值仿真结果进行了验证。最后得到了耦合系数与硅基微环谐振器结构参数之间的关系。(2)通过时域有限差分法(FDTD)对硅基微环谐振器进行了大量的数值仿真,得到了硅基微环谐振器结构参数对器件传输光谱的影响,并对仿真结果进行了理论分析。(3)引入微波网络的概念,将硅基微环谐振器等效为一个四端口网络,通过耦合模理论和光波干涉法得到了该网络的散射矩阵,并通过数值仿真对结果进行了验证。
[Abstract]:After half a century's development of microelectronic integration technology, the Moore's law is near the limit, and the further development meets the bottleneck, which is in need of technical breakthrough. In recent years, the research results of silicon-based photonics show that silicon and silicon-based photonic materials, as a new type of photonic materials, exhibit good optical properties in addition to their own excellent electrical properties, and the generation of light in silicon and silicon-based materials has been preliminarily realized in the laboratory. A series of functions such as transmission, control, interconnection and detection. As one of the most promising optoelectronic integration schemes, silicon based optoelectronic integration technology is another revolutionary technology after microelectronic integration technology, which has great economic and strategic significance for the construction and realization of the future information society. As the core modulator of silicon based optoelectronic integrated system, silicon based microring resonator has the advantages of small structure, high integration and low cost. The resonant characteristics of silicon microring resonator are combined with the thermo-optical effect and plasma dispersion effect of silicon material. Quantum-limited Stark effect is one of the most widely used devices in silicon based devices, which can realize the functions of high speed modulator, high speed optical opening and tunable filter. Therefore, the transmission characteristics of silicon based micro ring resonator are studied in this paper. The main work is as follows: (1) the coupling coefficient of silicon based micro ring resonator is derived by coupling mode theory (CMT). The results are verified by numerical simulation. Finally, the relationship between the coupling coefficient and the structural parameters of the silicon based microring resonator is obtained. (2) A large number of numerical simulations of the silicon based micro ring resonator are carried out by using the finite-difference time-domain method (FDTD). The influence of the structure parameters of silicon based microring resonator on the transmission spectrum of the device is obtained, and the simulation results are analyzed theoretically. (3) the concept of microwave network is introduced, and the silicon based micro ring resonator is equivalent to a four-port network. The scattering matrix of the network is obtained by coupling mode theory and optical wave interferometry, and the results are verified by numerical simulation.
【学位授予单位】：山东大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN629.1

【共引文献】