大功率压接式IGBT模块的热学设计与仿真
发布时间：2018-09-07 07:40
【摘要】：随着IGBT模块功率等级的提高,芯片的功率密度和工作结温大幅提升,导致器件长期可靠性受热应力的影响越来越大。本文以3 300 V/3 000 A规格压接式IGBT模块为例,对压接式IGBT模块热性能进行研究:分析了模块的传热模型并利用ANSYS对模块结构进行迭代仿真,发现模块双面散热存在不对称性;同时分析了模块结构对热阻的影响,并针对电极铜块面积、电极铜块厚度及钼片厚度等结构参数提出了优化方案,可为器件的结构优化设计提供参考。
[Abstract]:With the increase of IGBT module power level, the power density and working junction temperature of the chip are greatly increased, resulting in the long-term reliability of the device is more and more affected by the thermal stress. In this paper, the thermal performance of the compression IGBT module is studied by taking 300V / 3 000A specification IGBT module as an example. The heat transfer model of the module is analyzed and the iterative simulation of the module structure is carried out by using ANSYS. The asymmetry of heat dissipation on both sides of the module is found. At the same time, the influence of the module structure on the thermal resistance is analyzed, and the optimization scheme for the structural parameters such as the area of the electrode copper block, the thickness of the electrode copper block and the thickness of the molybdenum sheet is put forward, which can be used as a reference for the structural optimization design of the device.
【作者单位】： 株洲中车时代电气股份有限公司;
【分类号】：TN322.8
本文编号：2227634
[Abstract]:With the increase of IGBT module power level, the power density and working junction temperature of the chip are greatly increased, resulting in the long-term reliability of the device is more and more affected by the thermal stress. In this paper, the thermal performance of the compression IGBT module is studied by taking 300V / 3 000A specification IGBT module as an example. The heat transfer model of the module is analyzed and the iterative simulation of the module structure is carried out by using ANSYS. The asymmetry of heat dissipation on both sides of the module is found. At the same time, the influence of the module structure on the thermal resistance is analyzed, and the optimization scheme for the structural parameters such as the area of the electrode copper block, the thickness of the electrode copper block and the thickness of the molybdenum sheet is put forward, which can be used as a reference for the structural optimization design of the device.
【作者单位】： 株洲中车时代电气股份有限公司;
【分类号】：TN322.8
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