3300 V沟槽栅IGBT的衬底材料的优化设计

发布时间：2018-11-18 09:02

【摘要】：使用TCAD仿真软件对3 300 V沟槽栅IGBT的静态特性进行了仿真设计。重点研究了衬底材料参数、沟槽结构对器件击穿电压、电场峰值等参数的影响。仿真结果表明,随衬底电阻率增加,击穿电压增加,饱和电压和拐角位置电场峰值无明显变化;随衬底厚度增加,击穿电压增加,饱和电压增加,拐角位置电场峰值降低;随沟槽宽度增加,饱和电压降低,击穿电压和拐角位置电场峰值无明显变化;随沟槽深度增加,饱和电压降低,击穿电压无明显变化,拐角位置电场峰值增加;随沟槽拐角位置半径增加,击穿电压和饱和电压无明显变化,但拐角位置电场峰值减小。选择合适的衬底材料对仿真结果进行实验验证,实验结果与仿真结果相符,制备的IGBT芯片击穿电压为4 128 V,饱和电压约为2.18 V。
[Abstract]:The static characteristics of 3300V grooved gate IGBT are simulated and designed by using TCAD simulation software. The effects of substrate material parameters and groove structure on breakdown voltage and peak electric field are studied. The simulation results show that with the increase of the substrate resistivity, the breakdown voltage increases, the saturation voltage and the peak electric field at the corner position do not change obviously, but with the substrate thickness increasing, the breakdown voltage increases, the saturation voltage increases, and the peak value of the electric field at the corner position decreases. With the increase of groove width, the saturation voltage decreases, the breakdown voltage and the peak value of the corner electric field do not change obviously, but with the increase of the groove depth, the saturation voltage decreases, the breakdown voltage does not change obviously, and the peak value of the electric field increases at the corner position. With the increase of the corner radius, the breakdown voltage and saturation voltage do not change obviously, but the peak value of the electric field at the corner position decreases. The experimental results are in good agreement with the simulation results. The breakdown voltage and saturation voltage of the fabricated IGBT chip are 4 128V and 2.18V respectively.
【作者单位】：全球能源互联网研究院功率半导体研究所;先进输电技术国家重点实验室;
【基金】：国网电网公司科技项目(SGRI-GB-71-16-001) 国家能源应用技术研究及工程示范项目(NY20150703)
【分类号】：TN322.8

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