采用梯度算法的极紫外光刻光源—掩模优化方法研究

发布时间：2018-12-11 21:53

【摘要】：随着集成电路关键尺寸的进一步缩小,新一代极紫外(EUV)光刻系统的研制受到了相关领域研究人员的关注。EUV光刻技术很有可能取代当前的深紫外(DUV)光刻技术,成为22nm及以下技术节点集成电路制造中的主要光刻技术。为了进一步提高光刻系统的成像性能,业界普遍采用分辨率增强技术(RET)提高光刻系统的成像分辨率和图形保真度。常用的RET包括:光学邻近效应校正(OPC)技术、离轴照明(OAI)技术、相移掩模(PSM)技术和光源-掩模优化(SMO)技术等。其中,SMO技术对光源和掩模进行联合优化,相比单独优化掩模的OPC技术,进一步提高了优化自由度,从而能够更为有效地提高光刻系统的成像质量。目前针对DUV光刻系统SMO技术的研究相对深入,然而针对EUV光刻系统SMO技术的研究尚不完善。本文针对22-16nm及以下技术节点的EUV光刻系统,在综合考虑光学邻近效应、杂散光效应、光刻胶效应和掩模阴影效应的前提下,应用课题组自主研发的EUV光刻系统空间成像模型和梯度优化算法,发展了参数化同步型SMO、参数化混合型SMO、像素化同步型SMO和像素化混合型SMO四种优化算法。本文通过22nm和16nm节点的仿真分析,验证了上述SMO算法能够有效提高EUV光刻系统的成像性能,同时还对OPC算法和上述SMO算法的性能进行了对比研究。
[Abstract]:With the further reduction of the key dimensions of integrated circuits, the development of a new generation of ultra-ultraviolet (EUV) lithography system has attracted the attention of researchers in related fields. EUV lithography technology is likely to replace the current deep ultraviolet (DUV) lithography technology. 22nm and the following technology node integrated circuit manufacturing technology in the main lithography technology. In order to further improve the imaging performance of lithography system, resolution enhancement technology (RET) is widely used to improve the imaging resolution and graphic fidelity of lithography system. The commonly used RET includes optical proximity correction (OPC), off-axis illumination (OAI), phase shift mask (PSM) and lamp-mask optimization (SMO). The SMO technology optimizes the combination of light source and mask. Compared with the OPC technology which can optimize the mask alone, the optimization degree of freedom is further improved, and the imaging quality of lithography system can be improved more effectively. At present, the research on SMO technology of DUV lithography system is relatively deep, but the research on SMO technology of EUV lithography system is not perfect. In this paper, we consider the optical proximity effect, stray light effect, photoresist effect and mask shadow effect for the EUV lithography system of the 22-16nm and below technical nodes, and consider the optical proximity effect, the stray light effect, the photoresist effect and the mask shadow effect. Based on the spatial imaging model and gradient optimization algorithm of EUV lithography system, four optimization algorithms of parameterized synchronous SMO, mixed SMO, pixel synchronous SMO and pixel hybrid SMO are developed. Through the simulation analysis of 22nm and 16nm nodes, it is verified that the above SMO algorithm can effectively improve the imaging performance of EUV lithography system. At the same time, the performance of OPC algorithm and SMO algorithm are compared and studied.
【学位授予单位】：北京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.7

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