耐高压肖特基二极管的研究
发布时间：2018-12-11 23:37
【摘要】：随着电子科技的迅速发展,具有低击穿电压、反向漏电流大的传统肖特基二极管(SBD)已不适用于某些低功耗、大功率的电子市场。由此具有新型结构以及势垒材料的耐高压肖特基二极管应运而生,该肖特基二极管具有较低的漏电流和正向压降、耐高压、高频特性好以及较强的抗浪涌电流和抗过压能力。除了适用于高频整流和开关电源及保护电路在低压、大电流场合时作续流和整流之用,还被广泛应用于高速逻辑电路、通信电源、变频器和高速计算机中,具有很广泛的市场前景以及重要的应用价值。为了改善肖特基二极管的电学性能,文中采用保护环和场板终端结构,通过改进器件制造工艺过程中势垒的材料,设计制备的硅基肖特基二极管耐压性可达120V。论文中做的主要工作有以下几方面:(1)系统的阐述了肖特基势垒二极管的基本工作原理,研究了外延材料的选择对管芯性能的影响。最终研究表明:在SBD二极管两端施加一定的反向偏置电压时,通过穿通模式设计的外延层可以使管芯的串联电阻明显降低。(2)实验设计并制造了尺寸为60mils×60mils的肖特基二极管,其终端结构采用保护环和金属场板结构。测试结果表明:器件反向耐压值为112V,而传统肖特基二极管的反向耐压值一般为45V,此时器件的漏电流仅为2μA;正向电流为3A时,导通压降为0.71V。(3)改进器件制造工艺过程中形成肖特基势垒的材料,由具有较大功函数的NiPt60合金替换传统的Ni势垒金属,通过可靠性实验测试得出:制备的管芯热稳定性良好,在175℃下工作时具有良好的性能;而对于传统的镍势垒肖特基二极管,最高工作结温为125℃。说明肖特基二极管势垒材料的改变不但改善了管芯的电学特性,而且使其具有较高的可靠性和稳定性。(4)为了进一步提高器件的性能,利用Silvaco-TCAD软件对器件结构参数及工艺流程进行了仿真分析,并采用改善器件制备工艺的方法:(1)在生长外延前对硅片表面采取相应的化学腐蚀措施进行处理;(2)离子注入形成P+保护环后进行高温退火推结;(3)采用溅射工艺淀积势垒金属并进行高温合成;(4)金属反刻后进行PMA退火。试验结果表明:采用上述制备工艺可以大幅度减小管芯漏电流,改善了器件反向击穿特性。
[Abstract]:With the rapid development of electronic technology, traditional Schottky diode (SBD) with low breakdown voltage and high reverse leakage current is not suitable for some low-power and high-power electronic markets. Thus, a novel structure and barrier material with high voltage resistance Schottky diode emerged as the times require. The Schottky diode has lower leakage current and forward voltage drop, high voltage resistance, good high frequency characteristics and strong ability of resisting surge current and overvoltage. In addition to being suitable for high-frequency rectifier and switching power supply and protection circuits for continuous current and rectifier in low-voltage and high-current situations, they are also widely used in high-speed logic circuits, communication power sources, frequency converters and high-speed computers. It has a wide market prospect and important application value. In order to improve the electrical properties of Schottky diodes, the protective ring and the field plate terminal structure are adopted in this paper. By improving the material of the barrier in the fabrication process of the device, the voltage resistance of the silicon Schottky diode is up to 120V. The main work in this paper is as follows: (1) the basic principle of Schottky barrier diode is described systematically, and the influence of epitaxial material selection on the core performance is studied. The final study shows that the series resistance of the core can be significantly reduced by the epitaxial layer designed by the through mode when the reverse bias voltage is applied at both ends of the SBD diode. (2) Schottky diode with the size of 60mils 脳 60mils is designed and fabricated experimentally. Its terminal structure adopts protection ring and metal field plate structure. The test results show that the reverse voltage resistance of the device is 112V, and that of the conventional Schottky diode is 45V. The leakage current of the device is only 2 渭 A. When the forward current is 3A, the on-voltage drop is 0.71V. (3) the material formed Schottky barrier in the process of device fabrication is improved, and the traditional Ni barrier metal is replaced by the NiPt60 alloy with large work function. The results of reliability test show that the prepared core has good thermal stability and good performance at 175 鈩，
本文编号：2373439
[Abstract]:With the rapid development of electronic technology, traditional Schottky diode (SBD) with low breakdown voltage and high reverse leakage current is not suitable for some low-power and high-power electronic markets. Thus, a novel structure and barrier material with high voltage resistance Schottky diode emerged as the times require. The Schottky diode has lower leakage current and forward voltage drop, high voltage resistance, good high frequency characteristics and strong ability of resisting surge current and overvoltage. In addition to being suitable for high-frequency rectifier and switching power supply and protection circuits for continuous current and rectifier in low-voltage and high-current situations, they are also widely used in high-speed logic circuits, communication power sources, frequency converters and high-speed computers. It has a wide market prospect and important application value. In order to improve the electrical properties of Schottky diodes, the protective ring and the field plate terminal structure are adopted in this paper. By improving the material of the barrier in the fabrication process of the device, the voltage resistance of the silicon Schottky diode is up to 120V. The main work in this paper is as follows: (1) the basic principle of Schottky barrier diode is described systematically, and the influence of epitaxial material selection on the core performance is studied. The final study shows that the series resistance of the core can be significantly reduced by the epitaxial layer designed by the through mode when the reverse bias voltage is applied at both ends of the SBD diode. (2) Schottky diode with the size of 60mils 脳 60mils is designed and fabricated experimentally. Its terminal structure adopts protection ring and metal field plate structure. The test results show that the reverse voltage resistance of the device is 112V, and that of the conventional Schottky diode is 45V. The leakage current of the device is only 2 渭 A. When the forward current is 3A, the on-voltage drop is 0.71V. (3) the material formed Schottky barrier in the process of device fabrication is improved, and the traditional Ni barrier metal is replaced by the NiPt60 alloy with large work function. The results of reliability test show that the prepared core has good thermal stability and good performance at 175 鈩，
本文编号：2373439
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2373439.html
