N-B-Al共掺荧光4H-SiC施主受主对发光性能研究

发布时间：2018-12-19 12:22

【摘要】：施主受主共掺杂的荧光4H-SiC可以通过复合发出可见光,影响其发光性能的一个重要因素是施主受主掺杂的浓度。本研究通过PVT生长方法制备了3英寸N-B-Al共掺的4H-SiC晶体,采用Raman光谱、SIMS对晶体的结晶类型和掺杂浓度进行了表征;采用PL发射谱和激发谱、荧光衰减曲线表征和内量子效率对晶体的发光波长、强度、施主受主对复合发光性能进行了研究。结果发现,低浓度Al掺杂样品在室温下发出黄绿色荧光。低浓度Al掺杂在晶体中提供较少的受主;高浓度B、N掺杂形成施主,从而贡献充足的电子空穴对。这些电子空穴的复合提高了施主受主对复合的内量子效率,进而增强光致发光强度,增加平均发光寿命。
[Abstract]:The donor co-doped fluorescent 4H-SiC can emit visible light through recombination. The concentration of donor acceptor doping is one of the important factors that affect the luminescence performance of the donor. In this study, 3 inch N-B-Al co-doped 4H-SiC crystals were prepared by PVT growth method. The crystal types and doping concentrations were characterized by Raman spectra and SIMS. PL emission spectra, excitation spectra, fluorescence attenuation curves and internal quantum efficiency were used to study the photoluminescence wavelength, intensity and donor acceptor of the crystal. The results show that the low concentration Al doped samples emit yellowish green fluorescence at room temperature. Low concentration of Al dopants provide less acceptors in crystals, and high concentrations of Al doping form donors, thus contributing sufficient electron hole pairs. The recombination of these electron holes enhances the inner quantum efficiency of the donor acceptor on the recombination, and further increases the photoluminescence intensity and the average luminescence lifetime.
【作者单位】：中国科学院上海硅酸盐研究所;
【分类号】：TN304.24

【参考文献】