水平磁场下18英寸直拉硅单晶生长工艺的三维数值模拟

发布时间：2019-03-30 22:22

【摘要】：利用计算机模拟仿真技术对适用于生长18英寸直拉单晶硅的40英寸热场在水平磁场下的生长工艺进行三维模拟仿真计算,重点分析了不同强度水平磁场作用下熔体和晶体中的温度场分布、熔体中流场的变化及其对晶体生长固/液界面形状的影响及其变化规律,并进一步研究了不同水平磁场强度对熔体和晶体中氧杂质含量分布影响。数值模拟计算结果表明:由于外加水平磁场的引入,熔体的流动呈现完全的三维、非对称特点,从而导致熔体内的温度场、氧杂质的分布呈现明显的三维非对称特性;水平磁场强烈影响固/液生长界面下熔体的流动特性,从而显著影响熔体的固/液生长界面形状及氧杂质传输过程。
[Abstract]:The technology of computer simulation and simulation is used to simulate the growth process of 40-inch thermal field suitable for the growth of 18-inch Czochralski monocrystalline silicon in a horizontal magnetic field. The distribution of temperature field in melt and crystal under the action of horizontal magnetic field of different intensity, the change of flow field in melt and its influence on the shape of solid-liquid interface of crystal growth are analyzed emphatically. The influence of different horizontal magnetic field intensity on the distribution of oxygen impurities in melt and crystal was further studied. The numerical simulation results show that due to the introduction of the external horizontal magnetic field, the melt flow presents complete three-dimensional, asymmetric characteristics, which results in the temperature field in the melt and the distribution of oxygen impurities showing obvious three-dimensional asymmetric characteristics. The horizontal magnetic field strongly affects the flow characteristics of the melt at the solid-liquid growth interface, thus significantly affects the shape of the solid-liquid growth interface and the oxygen impurity transport process of the melt.
【作者单位】：上海大学省部共建高品质特殊钢冶金与制备国家重点实验室;
【基金】：国家自然科学基金项目(51401116,51404148) 上海市科委基金项目(13DZ1108200,13521101102)资助
【分类号】：TN304.12

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