片上传输线模型与GaN HEMT小信号模型研究
发布时间：2019-04-19 06:54
【摘要】：作为电子产业的核心,集成电路产业的发展对于科技的进步与经济的发展都有很大促进作用。目前,集成电路产业迎来良好的发展前景。使用电路仿真软件辅助设计是设计电路的基本方法。仿真的准确性依赖于所使用模型的准确性。因此建立准确的器件模型具有重要的意义。 本文第一部分研究内容为片上传输线等效电路模型的建立及模型中参数的提取方法。其中,慢波传输线作为高性能的传输线,由于具有更短的波长,能有效降低芯片面积而受到广泛的关注。然而对这类高性能传输线的研究集中在不同尺寸结构的电磁特性,对慢波传输线建立等效电路模型的研究工作却不多。本文首先使用电磁仿真工具ADS研究慢波传输线的性能,确定慢波传输线的结构尺寸。然后为慢波传输线建立等效电路模型。对于常见的每一小节的等效电路结构pi结构与T结构进行改进,将模型修改为对称的形式,能有效的在不增加模型复杂度的情况下准确拟合S参数 GaN HEMT是一种适合于高频率,高功率应用的功率器件。相对其他半导体材料,具有宽的禁带宽度,高电子迁移率,更大的电流密度,由于其优异的器件性能得到广泛的关注。对不断出现的新器件的不同的特性,传统的模型不一定适用。因此研究对它建立合适的模型具有重要的意义。 本文第二部分内容为对GaN HEMT的测试数据建立模型。使用经验公式,并做相应的改动,提取模型参数,准确的拟合了测量到的直流特性,并使用非传统的曲线拟合方法,人工神经网络快速的拟合了直流特性。通过外部寄生提取,与偏置无关的外部电容,电感,电阻的提取,内部等效电路模型提取,建立小信号等效电路模型,为大信号模型建立提供了基础。 综上所述,本文建立了慢波传输线的宽频带等效电路模型,能有效的指导设计。建立的GaN HEMT直流模型与小信号等效电路模型为被测晶体管应用在电路仿真提供了基础。
[Abstract]:As the core of electronic industry, the development of integrated circuit industry promotes the progress of science and technology and the development of economy. At present, the integrated circuit industry ushered in a good development prospect. The basic method of circuit design is to use circuit simulation software to design circuit. The accuracy of simulation depends on the accuracy of the model used. Therefore, the establishment of accurate device model is of great significance. The first part of this paper is about the establishment of the equivalent circuit model of on-chip transmission line and the method of extracting the parameters from the model. Among them, as a high-performance transmission line, slow-wave transmission line is widely concerned because it has shorter wavelength and can effectively reduce the chip area. However, the research on this kind of high-performance transmission lines focuses on the electromagnetic characteristics of different size structures, but the research work on establishing equivalent circuit models of slow-wave transmission lines is few. In this paper, the electromagnetic simulation tool ADS is used to study the performance of the slow-wave transmission line, and the structure size of the slow-wave transmission line is determined. Then the equivalent circuit model is established for the slow wave transmission line. The equivalent circuit structure pi and T structure of each section are improved, and the model is modified to symmetrical form. Accurate fitting of S-parameter GaN HEMT without increasing the complexity of the model is a power device suitable for high-frequency and high-power applications. Compared with other semiconductor materials, it has wide band gap, high electron mobility and larger current density. It has attracted much attention because of its excellent device performance. Traditional models are not necessarily applicable to the different characteristics of emerging new devices. Therefore, it is of great significance to establish a suitable model for it. The second part of this paper is to model the test data of GaN HEMT. Using empirical formula and corresponding changes, the model parameters are extracted, the measured DC characteristics are accurately fitted, and non-traditional curve fitting methods are used to quickly fit the DC characteristics by artificial neural network (Ann). The extraction of external parasitic, the extraction of external capacitance, inductance and resistance independent of bias, the extraction of internal equivalent circuit model and the establishment of small signal equivalent circuit model provide a basis for the establishment of large signal model. In conclusion, the broadband equivalent circuit model of slow-wave transmission line is established in this paper, which can guide the design of slow-wave transmission line effectively. The GaN HEMT DC model and the small signal equivalent circuit model provide the basis for the application of the measured transistor in the circuit simulation.
【学位授予单位】：中国科学技术大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
本文编号：2460702
[Abstract]:As the core of electronic industry, the development of integrated circuit industry promotes the progress of science and technology and the development of economy. At present, the integrated circuit industry ushered in a good development prospect. The basic method of circuit design is to use circuit simulation software to design circuit. The accuracy of simulation depends on the accuracy of the model used. Therefore, the establishment of accurate device model is of great significance. The first part of this paper is about the establishment of the equivalent circuit model of on-chip transmission line and the method of extracting the parameters from the model. Among them, as a high-performance transmission line, slow-wave transmission line is widely concerned because it has shorter wavelength and can effectively reduce the chip area. However, the research on this kind of high-performance transmission lines focuses on the electromagnetic characteristics of different size structures, but the research work on establishing equivalent circuit models of slow-wave transmission lines is few. In this paper, the electromagnetic simulation tool ADS is used to study the performance of the slow-wave transmission line, and the structure size of the slow-wave transmission line is determined. Then the equivalent circuit model is established for the slow wave transmission line. The equivalent circuit structure pi and T structure of each section are improved, and the model is modified to symmetrical form. Accurate fitting of S-parameter GaN HEMT without increasing the complexity of the model is a power device suitable for high-frequency and high-power applications. Compared with other semiconductor materials, it has wide band gap, high electron mobility and larger current density. It has attracted much attention because of its excellent device performance. Traditional models are not necessarily applicable to the different characteristics of emerging new devices. Therefore, it is of great significance to establish a suitable model for it. The second part of this paper is to model the test data of GaN HEMT. Using empirical formula and corresponding changes, the model parameters are extracted, the measured DC characteristics are accurately fitted, and non-traditional curve fitting methods are used to quickly fit the DC characteristics by artificial neural network (Ann). The extraction of external parasitic, the extraction of external capacitance, inductance and resistance independent of bias, the extraction of internal equivalent circuit model and the establishment of small signal equivalent circuit model provide a basis for the establishment of large signal model. In conclusion, the broadband equivalent circuit model of slow-wave transmission line is established in this paper, which can guide the design of slow-wave transmission line effectively. The GaN HEMT DC model and the small signal equivalent circuit model provide the basis for the application of the measured transistor in the circuit simulation.
【学位授予单位】：中国科学技术大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
【参考文献】
相关期刊论文 前3条
1 于宗光;黄伟;;中国集成电路设计产业的发展趋势[J];半导体技术;2014年10期
2 冯亚林;张蜀平;;集成电路的现状及其发展趋势[J];微电子学;2006年02期
3 王永刚;;集成电路的发展趋势和关键技术[J];电子元器件应用;2009年01期
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