基于InGaAs MOSFET的E类功率放大器的研究
发布时间：2019-05-27 01:56
【摘要】：传统硅基CMOS集成技术遵循摩尔定律通过不断缩小特征尺寸来提高器件的工作速度、增加集成度以及降低成本,然而在进入纳米时代后开始面临着来自技术层面和物理层面的双重挑战。InGaAs MOSFET因其优越的电子迁移率,成为了下一代CMOS技术的研究热点。本论文主要基于中科院微电子研究所器件及其制造工艺,以InGaAs MOSFET功率器件和射频E类功率放大器的设计为中心,分别开展了以下研究工作:1.基于中科院微电子研究所工艺条件,完成了InGaAs MOSFET功率器件的设计及制作,同时完成了GaAs背孔工艺的研究,实现了完整的InGaAs MOSFET MMIC制作工艺流程。2.研究并完成了与In GaAs MOSFET工艺相兼容的50Ω/□的TaN薄膜电阻、Si3N4MIM电容和螺旋电感无源器件制备。基于MIM电容和螺旋电感的测试和MOM仿真数据,完成了电容和电感的建模工作。同时本文还研究了Al2O3介质的厚度与MIM电容的直流特性和射频特性之间的相互关系,为Al2O3介质MIM电容应用于InGaAs MOSFET MMIC电路做了一定的基础。3.完成了InGaAs MOSFET从小信号模型到大信号模型的建模流程。根据InGaAs MOSFET功率器件结构,建立小信号模型的等效拓扑结构,提出小信号模型参数的直接提取方法。并利用IC-CAP建模软件和ADS仿真软件进行InGaAs MOSFET的EEHEMT大信号模型提参建模以及后期拟合工作。4.利用InGaAs MOSFET功率器件大信号模型,完成了两级射频E类功率放大器的仿真设计。该功率放大器在4V漏极工作电压,-1.2V栅极工作电压下,工作频率为2.45 GHz~2.55 GHz,P1dB30dBm,Gain27dB,PAE65%。
[Abstract]:The traditional silicon-based CMOS integration technology follows Moore's law to improve the working speed of the device, increase the integration and reduce the cost by continuously reducing the characteristic size. However, after entering the nano-era, Ingaas MOSFET has become the research focus of the next generation CMOS technology because of its superior electron mobility. This paper is mainly based on the device and its manufacturing process of the Institute of Microelectronics of the Chinese Academy of Sciences. Based on the design of InGaAs MOSFET power device and RF class E power amplifier, the following research work has been carried out: 1. Based on the process conditions of Institute of Microelectronics, Chinese Academy of Sciences, the design and fabrication of InGaAs MOSFET power device are completed, and the research of GaAs back hole process is completed, and the complete InGaAs MOSFET MMIC fabrication process is realized. 2. The fabrication of 50 惟 /-TaN thin film resistance, Si3N4MIM capacitance and spiral inductor passive devices compatible with In GaAs MOSFET process is studied and completed. Based on the test of MIM capacitance and spiral inductance and MOM simulation data, the modeling of capacitance and inductance is completed. At the same time, the relationship between the thickness of Al2O3 dielectric and the DC and RF characteristics of MIM capacitance is also studied, which makes a certain basis for the application of Al2O3 dielectric MIM capacitance in InGaAs MOSFET MMIC circuit. The modeling process of InGaAs MOSFET from small signal model to large signal model is completed. According to the structure of InGaAs MOSFET power device, the equivalent topological structure of small signal model is established, and the direct extraction method of small signal model parameters is proposed. IC-CAP modeling software and ADS simulation software are used to model and fit the EEHEMT large signal model of InGaAs MOSFET. 4. Based on the large signal model of InGaAs MOSFET power device, the simulation design of two-stage RF E power amplifier is completed. The power amplifier operates at a frequency of 2.45 GHz~2.55 GHz,P1dB30dBm,Gain27dB,PAE65%. at 4V drain voltage and-1.2V gate operating voltage.
【学位授予单位】：桂林电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75
本文编号：2485813
[Abstract]:The traditional silicon-based CMOS integration technology follows Moore's law to improve the working speed of the device, increase the integration and reduce the cost by continuously reducing the characteristic size. However, after entering the nano-era, Ingaas MOSFET has become the research focus of the next generation CMOS technology because of its superior electron mobility. This paper is mainly based on the device and its manufacturing process of the Institute of Microelectronics of the Chinese Academy of Sciences. Based on the design of InGaAs MOSFET power device and RF class E power amplifier, the following research work has been carried out: 1. Based on the process conditions of Institute of Microelectronics, Chinese Academy of Sciences, the design and fabrication of InGaAs MOSFET power device are completed, and the research of GaAs back hole process is completed, and the complete InGaAs MOSFET MMIC fabrication process is realized. 2. The fabrication of 50 惟 /-TaN thin film resistance, Si3N4MIM capacitance and spiral inductor passive devices compatible with In GaAs MOSFET process is studied and completed. Based on the test of MIM capacitance and spiral inductance and MOM simulation data, the modeling of capacitance and inductance is completed. At the same time, the relationship between the thickness of Al2O3 dielectric and the DC and RF characteristics of MIM capacitance is also studied, which makes a certain basis for the application of Al2O3 dielectric MIM capacitance in InGaAs MOSFET MMIC circuit. The modeling process of InGaAs MOSFET from small signal model to large signal model is completed. According to the structure of InGaAs MOSFET power device, the equivalent topological structure of small signal model is established, and the direct extraction method of small signal model parameters is proposed. IC-CAP modeling software and ADS simulation software are used to model and fit the EEHEMT large signal model of InGaAs MOSFET. 4. Based on the large signal model of InGaAs MOSFET power device, the simulation design of two-stage RF E power amplifier is completed. The power amplifier operates at a frequency of 2.45 GHz~2.55 GHz,P1dB30dBm,Gain27dB,PAE65%. at 4V drain voltage and-1.2V gate operating voltage.
【学位授予单位】：桂林电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75
【参考文献】
相关期刊论文 前1条
1 D.S.RAWAL;B.K.SEHGAL;R.MURALIDHARAN;H.K.MALIK;;Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl_2/BCl_3-Based Inductively Coupled Plasma[J];Plasma Science and Technology;2011年02期
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