n-AlInGaN作为电子缓冲层量子势垒的GaN基LED发光效率提升研究
发布时间：2019-06-18 08:47
【摘要】：为减少发光量子阱区的缺陷,缓解量子阱区的应力,减小极化效应,提高量子阱结晶质量,本文将n-AlInGaN作为非对称电荷谐振隧道(CART)层即电子缓冲层中的量子势垒应用于GaN基LED中,以降低外量子效率衰减、提高发光效率。实验数据表明,在相同的正向偏压下,相对于传统的以GaN为CART量子势垒的LED,采用n-AlInGaN作为势垒层具有更大光输出功率。原子力显微镜结果显示,以n-AlInGaN为CART势垒层能有效截止底层产生的线性位错,降低量子阱区由于晶格失配造成的应力。由于极化作用的减小,及电流扩展效应,采用n-AlInGaN作为势垒层样品的外量子效率衰减减弱,器件的抗静电能力也明显增强。
[Abstract]:In order to reduce the defects in the luminous quantum well region, alleviate the stress in the quantum well region, reduce the polarization effect and improve the crystallization quality of the quantum well, n-AlInGaN is applied to the GaN based LED as the quantum barrier in the asymmetric charge resonant tunnel (CART) layer, that is, the electron buffer layer, in order to reduce the attenuation of the external quantum efficiency and improve the luminous efficiency. The experimental data show that the n-AlInGaN as the barrier layer has higher optical output power than the traditional LED, with GaN as the CART quantum barrier at the same forward bias. The results of atomic force microscope show that the linear dislocation produced by the bottom layer can be effectively cut off by using n-AlInGaN as the CART barrier layer, and the stress caused by lattice mismatch in the quantum well region can be reduced. Due to the decrease of polarization and current spread effect, the external quantum efficiency attenuation of n-AlInGaN as barrier layer sample is weakened, and the antistatic ability of the device is also obviously enhanced.
【作者单位】： 武汉产品质量监督检验所;中南民族大学电子信息工程学院;
【分类号】：TN312.8
，
本文编号：2501340
[Abstract]:In order to reduce the defects in the luminous quantum well region, alleviate the stress in the quantum well region, reduce the polarization effect and improve the crystallization quality of the quantum well, n-AlInGaN is applied to the GaN based LED as the quantum barrier in the asymmetric charge resonant tunnel (CART) layer, that is, the electron buffer layer, in order to reduce the attenuation of the external quantum efficiency and improve the luminous efficiency. The experimental data show that the n-AlInGaN as the barrier layer has higher optical output power than the traditional LED, with GaN as the CART quantum barrier at the same forward bias. The results of atomic force microscope show that the linear dislocation produced by the bottom layer can be effectively cut off by using n-AlInGaN as the CART barrier layer, and the stress caused by lattice mismatch in the quantum well region can be reduced. Due to the decrease of polarization and current spread effect, the external quantum efficiency attenuation of n-AlInGaN as barrier layer sample is weakened, and the antistatic ability of the device is also obviously enhanced.
【作者单位】： 武汉产品质量监督检验所;中南民族大学电子信息工程学院;
【分类号】：TN312.8
，
本文编号：2501340
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