反应离子刻蚀制备的多晶黑硅损伤去除与钝化性能研究
发布时间：2019-06-18 09:39
【摘要】：结合SiO_2纳米球掩模和反应离子刻蚀技术制备了结构呈周期性排列的多晶黑硅,利用低浓度的NaOH溶液去除由荷能离子撞击所带来的损伤层,优化了多晶黑硅结构。在多晶黑硅上用原子层沉积技术沉积一层Al_2O_3薄膜,并对样品进行快速热退火处理。结果表明,采用低浓度的NaOH溶液可以完全去除损伤层,在保持原有黑硅结构的基础上使表面结构更加光滑;经450℃快速热退火后少子寿命达到29.34μs,表面复合速率为306cm·s-1,在可见光范围内平均反射率降至7.12%。
[Abstract]:Polycrystalline black silicon with periodic arrangement was prepared by SiO_2 nanosphere mask and reactive ion etch. The damage layer caused by energy ion impact was removed by using low concentration NaOH solution, and the structure of polycrystalline black silicon was optimized. A layer of Al_2O_3 thin films were deposited on polycrystalline black silicon by atomic layer deposition, and the samples were treated by rapid thermal annealing. The results show that the damage layer can be completely removed by using low concentration NaOH solution, and the surface structure is smoother on the basis of maintaining the original black silicon structure. After rapid thermal annealing at 450 鈩，
本文编号：2501372
[Abstract]:Polycrystalline black silicon with periodic arrangement was prepared by SiO_2 nanosphere mask and reactive ion etch. The damage layer caused by energy ion impact was removed by using low concentration NaOH solution, and the structure of polycrystalline black silicon was optimized. A layer of Al_2O_3 thin films were deposited on polycrystalline black silicon by atomic layer deposition, and the samples were treated by rapid thermal annealing. The results show that the damage layer can be completely removed by using low concentration NaOH solution, and the surface structure is smoother on the basis of maintaining the original black silicon structure. After rapid thermal annealing at 450 鈩，
本文编号：2501372
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