Improvement of the high-k/Ge interface thermal stability usi

发布时间：2021-12-30 16:45

　　In this work, an in-situ ozone treatment is carried out to improve the interface thermal stability of HfO₂/Al₂O₃ gate stack on germanium（Ge） substrate. The micrometer scale level of HfO₂/Al₂O₃ gate stack on Ge is studied using conductive atomic force microscopy（AFM） with a conductive tip. The initial results indicate that comparing with a non insitu ozone treated sample, the interface thermal stability of the sample with an in-sit... 

【文章来源】：Chinese Physics B. 2017,26(08)EISCI

【文章页数】：6 页

【文章目录】：
1. Introduction
2. Experiment
3. Results and discussion
4. Conclusions



本文编号：3558602