磁控溅射法制备TiN硬质薄膜以及退除薄膜工艺研究

发布时间：2018-03-25 04:05

本文选题：硬质薄膜　切入点：等离子体增强磁控溅射　出处：《辽宁科技大学》2015年硕士论文

【摘要】：随着科学技术的逐渐发展,在制造业,铸造业等行业中的作业条件愈趋极端,这就对使用工具的品质提出了更高的要求。要求工具表面有好的耐磨性、抗腐蚀性和抗氧化性。在工具表面镀上一层硬质薄膜能够恰好的解决这个问题。硬质薄膜的制备方法有物理气相沉积(PVD)、化学气相沉积(CVD)。而物理气相沉积中又分为真空蒸发镀膜、磁控溅射镀膜和电弧离子镀镀膜三类。本论文的研究工作主要有两个部分,第一个是以磁控溅射法制备TiN薄膜为例,来进行磁控溅射设备的安装,调试和初步实验。等离子体增强磁控溅射设备的核心部分是热导丝的放电,本设备以磁控溅射为基础,设备主要有真空系统,电路系统,溅射系统组成,设备调试的关键是在于,调整一定的氮气和氩气的比例,在电路系统能承受的范围内进行高效率的沉积薄膜,最后应用此设备试制了氮化钛薄膜,确保这个真空系统的稳定性和可复制性,从而为工业生产提供足够、可靠的依据。第二部分是对于失效的氮化钛薄膜进行退除薄膜的研究。在碱性溶液(NaOH)环境下配合双氧水(H2O2)、葡萄糖酸钠(GA)、十二烷基磺酸钠(SDS)、三聚磷酸钠(STPP),可有效的使工具钢表面TiN薄膜脱落且不影响基体的二次镀膜。在NaOH与二水合柠檬酸三钠作为电解液,采用电化学方法能够推出Cr N薄膜。实验表征方法有扫描电子显微镜(SEM)来观察薄膜的结构,台阶仪来测量薄膜的厚度,X射线衍射仪(XRD)来了解薄膜的相组成以各组元成分,显微硬度仪来检测基体以及镀覆上薄膜后基体硬度。实验结果表明磁控溅射设备真空仓为1M3,采用单靶溅射,控制溅射速率在磁滞回线内,Ar:N2=80:7,电流为5A,靶电压为385V,灯丝电流在4A时,能结合成致密金黄色TiN薄膜。
[Abstract]:With the development of science and technology, the working conditions in manufacturing, foundry industry and other industries are becoming more and more extreme, which puts forward higher requirements for the quality of tools used. Corrosion resistance and oxidation resistance. Coating a hard film on the tool surface can exactly solve this problem. The hard film is prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD) and vacuum evaporation. Magnetron sputtering and arc ion plating are three kinds of coatings. In this paper, there are two main parts of the research work. The first is to use magnetron sputtering method to prepare TiN film as an example to install the magnetron sputtering equipment. The core part of plasma enhanced magnetron sputtering equipment is the discharge of thermal conductance wire. The equipment is based on magnetron sputtering. The equipment consists of vacuum system, circuit system and sputtering system. The key to debugging the equipment is to adjust the ratio of nitrogen to argon, and to deposit the film efficiently within the range of the circuit system. Finally, the titanium nitride film is produced by using this equipment. To ensure the stability and reproducibility of this vacuum system, thus providing sufficient supply for industrial production, Reliable basis. The second part is the study on the removal of the failed titanium nitride thin film. In the alkaline solution NaOH) environment, the mixture of hydrogen peroxide, sodium gluconate, sodium dodecyl sulfonate, sodium dodecyl sulfonate and sodium tripolyphosphate can be effectively used to remove the film, which can be used in the presence of hydrogen peroxide, sodium gluconate, sodium dodecyl sulfonate and sodium tripolyphosphate. The TiN film on the tool steel surface is shedding and does not affect the substrate. In the presence of NaOH and sodium citrate dihydrate as electrolyte, The structure of Cr N thin films can be observed by means of scanning electron microscope (SEM), and the thickness of the films is measured by a step meter (X ray diffractometer XRD) to understand the phase composition of the films and the composition of each component. The experimental results show that the vacuum chamber of the magnetron sputtering equipment is 1M3, the sputtering rate is controlled in the hysteresis loop, the current is 5A, the target voltage is 385V, and the filament current is 4A. It can be combined to form a dense golden TiN film.
【学位授予单位】：辽宁科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ134.11;TB383.2

【参考文献】