物理气相沉积（PVD）制备石墨类薄膜

发布时间：2018-04-03 00:29

  本文选题：直流非平衡磁控溅射　切入点：强流脉冲离子束　出处：《大连交通大学》2015年硕士论文

【摘要】：随着现代科技的进步和工业化的发展,非晶碳薄膜因其优良的性能已经广泛的被应用到各个领域。由于非晶碳膜具有高的电阻率和较强的绝缘性,使其在电学、微电子领域有着很好的应用,可作为光刻电路板的掩膜,在大规模生产集成电路的过程中起着不可替代的作用。具有良好化学稳定性的非晶碳膜,在场发射性能方面研究的较多,研究发现不会对其他元器件造成污染且在发射过程中电流稳定。非晶碳薄膜制备常规方法如化学气相沉积(CVD)、微波沉积法,等离子体电沉积,脉冲辉光PECVD以及物理沉积方式如磁控溅射、离子注入。相比传统的物理气相沉积,直流非平衡磁控溅射和强流脉冲离子束方法因为其特有的工作原理及鲜明的技术优势成为替代的主要手段。本文论述了薄膜技术的发展,介绍了国内外非晶碳薄膜研究进展,模拟了碳离子注入硅及金属基体的扩散过程、离子分布以及入射射程,在此基础上进一步研究了直流非平衡磁控溅射制备非晶碳膜的原理、工艺,并对制备的非晶碳膜进行了检测分析。对所制备的样品进行了真空退火处理,检测分析了退火后的非晶碳薄膜。运用取向附生法,即应用强流脉冲离子束技术辐照不同的基体,利用生长基质原子结构“种”出大量碳原子,通过真空退火处理使之前吸收的大量碳原子浮到基体表面,对最终它们可长成完整的一层石墨烯的可能性进行了研究。实验结果表明,采用直流非平衡磁控溅射在不同基体材料上制备了非晶碳薄膜,经过真空退火处理后非晶碳膜薄膜组织内应力得到缓解,表面变得光亮,表面形貌发生了变化表面形貌发生了变化,通过对比分析得出,制备非晶碳薄膜最佳工艺为工艺四,其经800℃真空退火后薄膜表面平整、致密效果好。经强流脉冲离子束(HIPIB)辐照后的样品表面形貌发生了变化,碳元素含量升高,样品表面粗糙度明显升高。对辐照后硅样品的截面进行了线扫描,碳离子注入的深度与扫描得出的深度基本一致。对真空退火后铒试样表面进行扫描和EDS分析,发现样品表面形貌发生了变化,碳元素含量进一步升高。
[Abstract]:With the progress of modern science and technology and the development of industrialization, amorphous carbon films have been widely used in various fields because of their excellent properties.Because of its high resistivity and strong insulation, amorphous carbon film has a good application in the field of electricity and microelectronics. It can be used as mask of lithography circuit board and plays an irreplaceable role in the large-scale production of integrated circuit.The amorphous carbon films with good chemical stability have been studied in the field emission performance. It is found that there is no pollution to other components and the current is stable during the emission process.Conventional methods such as chemical vapor deposition microwave deposition plasma electrodeposition pulsed glow PECVD and physical deposition methods such as magnetron sputtering and ion implantation are used to prepare amorphous carbon films.Compared with the traditional physical vapor deposition, DC unbalanced magnetron sputtering and intense pulsed ion beam methods have become the main alternative because of their unique working principles and distinct technical advantages.In this paper, the development of thin film technology is reviewed, and the research progress of amorphous carbon film at home and abroad is introduced. The diffusion process, ion distribution and incident range of carbon ion implanted silicon and metal substrate are simulated.On this basis, the principle and process of the preparation of amorphous carbon films by DC unbalanced magnetron sputtering are further studied, and the amorphous carbon films prepared are tested and analyzed.The samples were annealed in vacuum and the amorphous carbon films after annealing were examined and analyzed.In this paper, we use the orientation epigenetic method, that is, the intense pulsed ion beam technique is used to irradiate different substrates, and the atomic structure of the growth matrix is used to "breed" a large number of carbon atoms. By vacuum annealing, a large number of previously absorbed carbon atoms float to the surface of the matrix.The possibility that they could eventually grow into a complete layer of graphene was studied.The experimental results show that amorphous carbon films are deposited on different substrates by DC unbalanced magnetron sputtering. After vacuum annealing, the internal stress of amorphous carbon films is alleviated and the surface becomes bright.The surface morphology of amorphous carbon thin films was changed. The results showed that the best process for preparing amorphous carbon thin films was process four. The surface of amorphous carbon films annealed at 800 鈩，

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