晶面取向对同质外延单晶金刚石生长的影响

发布时间：2018-04-22 21:15

本文选题：同质外延 + 单晶金刚石　；参考：《真空科学与技术学报》2017年02期

【摘要】：利用微波等离子体化学气相沉积法,在天然金刚石的(100)、(110)以及(111)晶面上进行了同质外延生长单晶金刚石的研究,分析了这三个晶面上同质外延生长的特点。结果表明,不同的晶面上金刚石的生长速率和形貌显著不同。(110)晶面生长速率最快,表面由一系列大小不同的四面体组成,(100)晶面次之,呈现出排列规整的生长台阶,而(111)晶面生长速率最低,表面光滑平整,(100)和(111)的这种二维生长表面粗糙度明显小于(110)的一维生长表面,而这些特点与其生长模式密切相关。虽然在(111)晶面生长出了质量理想、表面平整的单晶金刚石,但是与(100)和(110)晶面外延生长的单晶金刚石相比,其质量还是较低。
[Abstract]:Homoepitaxial growth of monocrystalline diamond was studied by microwave plasma chemical vapor deposition (microwave plasma chemical vapor deposition) on the crystal plane of natural diamond, and the characteristics of homoepitaxial growth on these three crystal planes were analyzed. The results show that the growth rate and morphology of diamond on different crystal planes are significantly different. The growth rate of diamond faces is the fastest, and the surface is composed of a series of tetrahedrons of different sizes. On the other hand, the growth rate of the crystal plane is the lowest, and the surface roughness of this two-dimensional growth surface is obviously less than that of the one-dimensional growth surface with smooth and smooth surface. These characteristics are closely related to the growth pattern. Although the single crystal diamond with ideal quality and flat surface has been grown on the crystal plane, the quality of the single crystal diamond grown by epitaxial growth is still lower than that of the crystal plane epitaxial growth.
【作者单位】：武汉工程大学材料科学与工程学院湖北省等离子体化学与新材料重点实验室;中国电子科技集团公司第四十六研究所;
【基金】：国家自然科学基金项目中国电子科技集团公司第四十六研究所创新基金(CJ20150701)
【分类号】：TQ163

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