过渡族元素掺杂GaN纳米结构的制备及其物性研究

发布时间：2018-04-27 11:01

  本文选题：氮化镓 + 纳米线　； 参考：《新疆大学》2015年硕士论文

【摘要】：纳米化、掺杂等技术手段,可将GaN材料由原本的抗磁性转变为铁磁性。GaN基稀磁半导体因其兼具优良的光学、磁学、电学性质,可以用其构建磁光电于一体的半导体器件。本论文用化学气相沉积法制备了不同浓度Sm掺杂GaN纳米线,X射线衍射谱图表明样品中是纯六方GaN纤锌矿结构;扫描电子显微镜图显示GaN纳米线具有较大的长径比(400:1),高分辨透射电子显微镜及选区电子衍射图表明纳米线均为单晶;纳米线径向元素线扫描及元素分布图显示Sm较均匀地分布在GaN纳米线中;样品具有室温铁磁性,其可能源于元素Sm掺杂诱导GaN产生铁磁有序引起的。直接氮化法制备不同浓度Sm掺杂GaN粉体。X射线衍射谱图表明样品是六方GaN纤锌矿结构;掺杂能够使颗粒平均尺寸降低至100 nm以内;掺杂引起样品的光致发光光谱在近带边峰位处蓝移8 nm;掺杂有元素Sm的样品介电常数和介电损耗的恒定温度范围较纯GaN样品的大,且随温度升高,介电常数和介电损耗的增长速率变小。化学气相沉积法生长GaN纳米线时加入MoCl5可以有效地调控纳米线的微观形貌,同时也不会引起杂相产生。随着MoCl5物质的量浓度逐渐增多,GaN纳米线的径向尺寸减少、轴向尺寸增大,当其物质的量浓度达到10%时,生长的GaN纳米线质量最好,平均直径为50 nm,长度达到百微米以上,当物质的量浓度增至15%时,样品中出现了Z字型、螺旋型纳米结构;MoCl5物质的量浓度再增大则会使样品的微观形貌变化,呈二维甚至三维无规则生长。
[Abstract]:Nanocrystalline and doped GaN materials can be changed from diamagnetic to ferromagnetic. Gan based diluted magnetic semiconductors have excellent optical, magnetic and electrical properties, so they can be used to construct magneto-optoelectronic semiconductor devices. In this paper, GaN nanowires with different concentrations of Sm were prepared by chemical vapor deposition method. The X-ray diffraction spectra showed that the sample was pure hexagonal GaN wurtzite structure. Scanning electron microscopy (SEM) shows that GaN nanowires have a large aspect ratio of 400: 1g, and high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SEM) show that the nanowires are single crystal. The radial element line scanning and element distribution of nanowires show that Sm is uniformly distributed in GaN nanowires, and the samples have room temperature ferromagnetism, which may be due to the ferromagnetic ordering of GaN induced by element Sm doping. GaN powder with different concentration of Sm doped by direct nitridation. X-ray diffraction spectra show that the sample is hexagonal GaN wurtzite structure and the average particle size can be reduced to less than 100nm by doping. The photoluminescence spectra of samples induced by doping have a blue shift of 8 nm at the near band side peak, and the constant temperature range of dielectric constant and dielectric loss of samples doped with element Sm is larger than that of pure GaN samples, and increases with the increase of temperature. The growth rate of dielectric constant and dielectric loss becomes smaller. The addition of MoCl5 to the growth of GaN nanowires by chemical vapor deposition can effectively control the micromorphology of nanowires, and at the same time, it will not cause the formation of heterogeneity. With the increase of the concentration of MoCl5, the radial size of gan nanowires decreases and the axial dimension increases. When the mass concentration of GaN nanowires reaches 10 nm, the GaN nanowires are the best, with an average diameter of 50 nm and a length of more than 100 渭 m. When the mass concentration increases to 15, the Z shape appears in the sample, and the increase of the concentration of the helical nano-structure MoCl5 will result in the change of the microstructure of the sample and the growth of the sample is irregular in two or even three dimensions.
【学位授予单位】：新疆大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ133.51;TB383.1

【参考文献】

相关期刊论文 前1条

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本文编号：1810463