水热法制备氧化钨膜及其光电性能研究

发布时间：2018-05-28 10:42

本文选题：氧化钨 + 导电玻璃　；参考：《华中科技大学》2015年硕士论文

【摘要】：WO3作为一种特殊的半导体材料,禁带宽度较窄,可以吸收利用可见光范围内的太阳光,并且具有优异的光催化性能和气体敏感性能,目前受到人们的广泛关注。因此本研究期望合成具有不同微观结构的氧化物膜并对其光电流进行测试和研究,探究氧化钨内载流子的输运机制,为实现对其宏观性能的调控打下基础。本文通过水热法在经过激光刻蚀的导电玻璃(FTO)上一步法可控制备WO3膜器件,改变了传统器件的形态,最大限度的保持了材料的原有形貌,并通过改变辅助剂的种类直接实现对氧化钨形貌的调控。研究结果表明,采用K2SO4为辅助剂时合成的为纳米棒状氧化钨,合成的纳米棒长约800 nm,宽约100 nm,厚约50 nm。而辅助剂为(NH4)2C2O4的体系呈现纳米块特征,合成的纳米块长约600 nm,厚约100nm。在实现了对氧化钨形貌调控的基础上,本研究考查了不同气氛下的热处理过程对氧化钨纳米板膜的光电性能的影响。结果发现,没有经过退火处理的氧化钨样品的光电流幅值是经过氢化处理的样品的2.5倍,而氢化处理的样品的光电流幅值是在空气中退火处理的样品的17倍。结果证实可以通过热处理过程调控材料的内部结构,从而实现材料对太阳能的有效利用。最后,在前面热处理的基础上,引入Pt参量,考查了Pt修饰和气氛处理的耦合作用效果。本研究在实验中分别测试了干燥空气和甲醛气氛下氧化钨样品的光电响应性能。结果表明经过Pt修饰和氢化处理的氧化钨样品不仅表现出在光照下对甲醛气体高的敏感度(其敏感度值15.8约是没有经过二者耦合处理样品的15倍),同时还表现出在暗态条件下最高的电响应性能(在暗态下电流达到10-7数量级)。实验结果证实可以通过将Pt修饰和氢化处理进行耦合实现器件的敏感性能的提高同时也为在低耗能下实现对甲醛检测提供了可能性。
[Abstract]:As a special semiconductor material, WO3 has a narrow band gap, which can absorb and utilize the visible solar light, and has excellent photocatalytic performance and gas sensitivity. Therefore, this study is expected to synthesize oxide films with different microstructure, test and study their photocurrent, explore the transport mechanism of carriers in tungsten oxide, and lay a foundation for the regulation of their macroscopic properties. In this paper, the WO3 film devices are prepared by one step controlled method on the laser etched conductive glass by hydrothermal method, which changes the shape of the traditional devices and keeps the original morphology of the materials to the maximum extent. The morphology of tungsten oxide can be controlled directly by changing the kinds of auxiliary agents. The results show that nanorod tungsten oxide is synthesized by using K2SO4 as auxiliary agent. The nanorods are about 800nm in length, 100nm in width and 50nm in thickness. The auxiliary agent was NH _ 4N _ 2C _ 2O _ 4 system with nano-block characteristics. The synthesized nano-block was about 600 nm in length and 100 nm in thickness. On the basis of controlling the morphology of tungsten oxide, the effect of heat treatment in different atmosphere on the optoelectronic properties of tungsten oxide nanoplate was investigated. The results show that the photocurrent amplitude of tungsten oxide samples without annealing is 2.5 times of that of hydrogenated samples, while the photocurrent amplitude of hydrogenated samples is 17 times that of annealed samples in air. The results show that the effective utilization of solar energy can be realized by controlling the internal structure of the material during heat treatment. Finally, the coupling effect of Pt modification and atmosphere treatment was investigated by introducing Pt parameters on the basis of the previous heat treatment. In this study, the photoelectric response properties of tungsten oxide samples in dry air and formaldehyde atmosphere were measured. The results show that the Pt modified and hydrogenated tungsten oxide samples not only exhibit a high sensitivity to formaldehyde gas under light (sensitivity value 15.8 is about 15 times higher than that of the samples without coupling treatment, but also show a high sensitivity to formaldehyde gas). The highest electrical response performance is obtained under dark condition (the current reaches 10-7 orders of magnitude in the dark state). The experimental results show that the sensor sensitivity can be improved by the coupling of Pt modification and hydrogenation, and it also provides the possibility for the detection of formaldehyde at low energy consumption.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ136.13;TB383.2

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