三嗪对CVD石墨烯n型掺杂的研究

发布时间：2018-06-03 15:42

  本文选题：CVD石墨烯 + 三嗪　； 参考：《无机材料学报》2017年05期

【摘要】：以化学气相沉积(CVD)制备的单层石墨烯为原料,小分子三嗪为掺杂剂,采用吸附掺杂的方式,在低温下对石墨烯实现n型掺杂。利用拉曼光谱(Raman)、X射线光电子能谱分析(XPS)、原子力显微镜(AFM)、紫外分光光度计(UV)和霍尔效应测试仪(Hall)对样品的形貌、结构及电学性能进行表征。结果表明:该方法简单安全,能够对石墨烯实现均匀的n型掺杂,掺杂石墨烯的透光率达到95%。掺杂后石墨烯的特征峰G峰和2D峰向高波数移动。掺杂180 min后,载流子浓度达到4×10~(12)/cm~2,接近掺杂前的载流子浓度,掺杂后的石墨烯在450℃的退火温度下具有可逆能力,其表面电阻在300℃以下具有较好的稳定性。
[Abstract]:Graphene monolayer prepared by chemical vapor deposition (CVD) was used as raw material and triazine as dopant, and n-type graphene was doped at low temperature by adsorption doping. The morphology, structure and electrical properties of the samples were characterized by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), UV spectrophotometer (UV) and Hall effect tester (Hall). The results show that the method is simple and safe, and can achieve uniform n-type doping of graphene, and the transmittance of doped graphene reaches 95%. The G and 2D peaks of graphene were shifted to high wave number after doping. After doping for 180 min, the carrier concentration reached 4 脳 10 ~ (-1) / cm ~ (-2), which is close to the carrier concentration before doping. The doped graphene has reversible ability at 450 鈩，

本文编号：1973311