钨酸盐类陶瓷的制备及微波介电性能研究

发布时间：2018-06-08 22:20

  本文选题：微波介质陶瓷 + 钨酸盐　； 参考：《中国矿业大学》2017年硕士论文

【摘要】：微波介质陶瓷作为一种代表性的应用型高技术材料在近些年得到了广泛的研究。凭借着优良的介电性能,低温共烧陶瓷(LTCC)在近些年来也得到了广泛的关注。钨酸盐类陶瓷作为一种典型的低温共烧陶瓷,也被大家所重视起来。本文主要是通过固相反应法制备钨酸盐类微波介质陶瓷,对陶瓷样品的结构和介电性能做了初步的研究,并使用Materials Studio(MS)软件成功优化得出了钨酸盐化合物的晶体结构,将计算得到的XRD图谱与实验测试所得到的进行比对,结果趋于一致,为进一步的理论研究奠定了良好的基础。(1)根据设计的实验工艺条件成功的制备了AWO4(A=Zn,Mg,Co,Ni)微波介质陶瓷,分析了AWO4陶瓷样品的物相组成,微观结构以及微波介电性能。研究分析了不同的烧结温度对于AWO4微波介质陶瓷致密度以及介电性能的影响。XRD测试结果表明其与标准卡片ICDD-PDF#88-0251的衍射峰相对应,在图谱中并没有其它的衍射峰。随着烧结温度的增高,AWO4微波介质陶瓷的体积密度、介电常数以及品质因数有着大致相同的规律,总体上随着烧结温度的升高呈上升趋势;在此次实验工艺条件下制备的四类AWO4微波介质陶瓷样品中,性能较好的是Zn WO4陶瓷,它在1150℃的温度下烧结时,密度可以达到6.981g/cm3,其微波介电性能为:(28)33.15r?,Q×?=38300GHz,-(28)1.14f?ppm/℃;(2)通过加入四种不同质量比例的Cu O降低陶瓷样品的烧结温度,提高陶瓷样品的致密度。样品表面XRD测试结果中的衍射峰仍与标准卡ICDD-PDF#88-0251的衍射峰相对应,表明无第二相产生。微波介电性能测试结果显示,随着烧结温度的增加,陶瓷样品的体积密度和介电常数仍然呈上升趋势,但在一定程度上降低了陶瓷样品的品质因数;对于相同烧结温度下陶瓷样品,Cu O的掺杂比例越高,致密度和介电常数的增加越明显,其中Zn WO4-1wt%Cu O陶瓷样品在1100℃下烧结时(28)10.15r?,Q×?=4398GHz,-(28)5.11f?ppm/℃;(3)AWO4(A=Zn,Mg,Co,Ni)均为单斜相的黑钨矿结构,通过MS软件优化得到了AWO4化合物的晶体结构,进一步得出了其XRD理论计算图谱,并通过与样品测试得到的图谱对比分析我们可以发现两者的契合度很高,为进一步的理论研究做好了铺垫。
[Abstract]:Microwave dielectric ceramics as a representative of the application of high-tech materials have been widely studied in recent years. Due to its excellent dielectric properties, low-temperature co-fired ceramics (LTCCs) have been paid more and more attention in recent years. As a typical low-temperature co-fired ceramics, tungstate ceramics have been paid more attention to. In this paper, tungstate microwave dielectric ceramics were prepared by solid state reaction method. The structure and dielectric properties of ceramic samples were preliminarily studied, and the crystal structure of tungstate compounds was successfully optimized by using Materials Studio MSM software. Comparing the calculated XRD patterns with the experimental results, the results are consistent, which lays a good foundation for further theoretical research. According to the experimental conditions designed, the AWO _ 4O _ 4 AZN _ (Zn) mg _ (Co) Ni) microwave dielectric ceramics have been successfully prepared. The phase composition, microstructure and microwave dielectric properties of AWO _ 4 ceramics were analyzed. The effect of sintering temperature on the density and dielectric properties of AWO _ 4 microwave dielectric ceramics was investigated. XRD results showed that it corresponded to the diffraction peak of standard card ICDD-PDF #88-0251, and there were no other diffraction peaks in the spectrum. With the increase of sintering temperature, the bulk density, dielectric constant and quality factor of AWO4 microwave dielectric ceramics are approximately the same. Among the four kinds of AWO _ 4 microwave dielectric ceramic samples prepared under the experimental conditions, the Zn-WO _ 4 ceramics have better properties, and they are sintered at 1150 鈩，

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