掺杂改性对BCZT基无铅压电陶瓷结构与电学性能的影响
发布时间：2018-08-16 15:29
【摘要】：压电陶瓷因其特有的机械能-电能相互转化性能,在材料领域占有及其重要的地位。BCZT基无铅压电陶瓷因具有高的压电性能,成为有望替代含铅压电陶瓷的新型压电陶瓷材料。但BCZT基无铅压电陶瓷的居里温度低、烧结温度高等问题仍然没有得到很大的改进。本文采用传统固相烧结法制备BCZT基无铅压电陶瓷,分别研究了烧结温度、La2O3、SnO2、Sm2O3掺杂对BCZT基无铅压电陶瓷的相结构、显微结构以及电性能的影响。并进一步探讨了SnO2、Sm2O3掺杂对BCZT无铅压电陶瓷的铁电性能的影响。具体研究内容如下:1.研究了烧结温度对0.996 Ba0.85Ca0.15Zr0.1Ti0.9O3-0.004BiYO3陶瓷相结构、显微结构以及电学性能的影响。结果发现,当烧结温度为1420 o C时,陶瓷具有致密的显微结构,其电学性能:d33=130 pC/N,kp=18.2%,εr=4225,tanδ=1.95%。2.研究了La2O3掺杂对Ba0.85Ca0.15Zr0.1Ti0.9O3-0.8wt.%SiO2陶瓷相结构、显微结构以及电学性能的影响。结果表明,当La2O3掺杂量为0.4 wt.%时,陶瓷样品的晶粒均匀,气孔率少,具有致密的晶粒结构。且在此时陶瓷具有最优的电学性能:d33=153 pC/N,εr=4487,tanδ=2.44%。3.研究了SnO2掺杂对Ba0.85Ca0.15Zr0.1Ti0.9O3-0.2wt.%CuO2陶瓷相结构、电学性能以及介电弛豫行为的影响。结果表明,当SnO2掺杂量为0.3 wt.%时,陶瓷具有最优的电学性能:d33=286 pC/N,kp=36.01%,εr=3118,tanδ=1.64%。对陶瓷样品的介电性能研究结果表明,SnO2的掺杂使BCZT-Cu-x Sn陶瓷的居里温度由86.1 o C降低到67.4 o C,且掺杂SnO2后的陶瓷其弥散系数γ=1.841,表现为典型的弥散相变特征与介电弛豫行为。4.研究了Sm2O3掺杂对(Ba0.85Ca0.15)(Zr0.1Ti0.893Mn0.005Y0.002)O3无铅压电陶瓷显微结构、压电性能、介电性能、扩散相变与介电弛豫行为的影响。结果表明,当x=0.3wt.%时,陶瓷具有最佳的综合性能,即d33=171 pC/N,kp=20.45%,εr=5451,tanδ=2.03%。此外,对BCZTMY-x Sm陶瓷样品的介电性能研究结果表明,Sm2O3掺杂使BCZTMY-x Sm陶瓷的居里温度降低,且掺杂Sm2O3后的陶瓷,由于掺杂异性元素引起BCZT晶格的内部在微小区域内离子排列产生紊乱,出现极性微区,呈现出典型的弥散相变特征与介电弛豫行为。
[Abstract]:BCZT-based lead-free piezoelectric ceramics are expected to replace lead based piezoelectric ceramics because of their high piezoelectric properties because of their unique mechanical and electrical energy interconversion properties and play an extremely important role in the field of materials. However, the low Curie temperature and high sintering temperature of BCZT based lead-free piezoelectric ceramics have not been greatly improved. In this paper, BCZT based lead-free piezoelectric ceramics were prepared by conventional solid-state sintering method. The effects of sintering temperature on the phase structure, microstructure and electrical properties of BCZT based lead-free piezoelectric ceramics were studied. The effect of Sno _ 2 O _ 2 O _ 2 O _ 3 doping on the ferroelectric properties of BCZT lead-free piezoelectric ceramics was also discussed. The specific contents of the study are as follows: 1. The effect of sintering temperature on the phase structure, microstructure and electrical properties of 0.996 Ba0.85Ca0.15Zr0.1Ti0.9O3-0.004BiYO3 ceramics was studied. The results show that the ceramics have dense microstructure at sintering temperature of 1420 o C, and the electrical properties of the ceramics are as follows: d33130pC / Nkp 18.2 and 蔚 rn 4225tan 未 1.95.2. The effects of La2O3 doping on the phase structure, microstructure and electrical properties of Ba0.85Ca0.15Zr0.1Ti0.9O3-0.8wt.%SiO2 ceramics were investigated. The results show that when the doping amount of La2O3 is 0.4 wt.%, the samples have uniform grain size, low porosity and compact grain structure. And at this time, the ceramic has the best electrical property: D33153pC / N, 蔚 rn 4487tan 未 2.444.3. The effects of SnO2 doping on the phase structure, electrical properties and dielectric relaxation behavior of Ba0.85Ca0.15Zr0.1Ti0.9O3-0.2wt.%CuO2 ceramics were investigated. The results show that when the doping amount of SnO2 is 0.3wt.%, the ceramic has the best electrical properties: D33286pC / NkpN 36.01 and 蔚 rn 3118tan 未 1.64. The dielectric properties of BCZT-Cu-x Sn ceramics were studied. The results showed that the Curie temperature of BCZT-Cu-x Sn ceramics was decreased from 86.1 OC to 67.4 OC, and the dispersion coefficient 纬 was 1.841 after doping with SnO2, which was characterized by typical diffusion phase transition and dielectric relaxation behavior. The effects of Sm2O3 doping on the microstructure, piezoelectric properties, dielectric properties, diffusion phase transition and dielectric relaxation behavior of (Ba0.85Ca0.15) (Zr0.1Ti0.893Mn0.005Y0.002) O3 lead-free piezoelectric ceramics were investigated. The results show that the ceramic has the best comprehensive properties when xG 0.3wt.%, that is, d33171pC / NkpN 20.45545, 蔚 rr5451tan 未 = 2.03. In addition, the dielectric properties of BCZTMY-x Sm ceramics have been studied. The results show that the Curie temperature of BCZTMY-x Sm ceramics decreases with doping of Sm _ 2O _ 3, and the doping of Sm2O3 leads to the disorder of ion arrangement in the small region of the BCZT lattice due to the heterogeneity of the doped elements. There are polar microregions, which show typical diffuse phase transition and dielectric relaxation behavior.
【学位授予单位】：贵州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ174.1
本文编号：2186399
[Abstract]:BCZT-based lead-free piezoelectric ceramics are expected to replace lead based piezoelectric ceramics because of their high piezoelectric properties because of their unique mechanical and electrical energy interconversion properties and play an extremely important role in the field of materials. However, the low Curie temperature and high sintering temperature of BCZT based lead-free piezoelectric ceramics have not been greatly improved. In this paper, BCZT based lead-free piezoelectric ceramics were prepared by conventional solid-state sintering method. The effects of sintering temperature on the phase structure, microstructure and electrical properties of BCZT based lead-free piezoelectric ceramics were studied. The effect of Sno _ 2 O _ 2 O _ 2 O _ 3 doping on the ferroelectric properties of BCZT lead-free piezoelectric ceramics was also discussed. The specific contents of the study are as follows: 1. The effect of sintering temperature on the phase structure, microstructure and electrical properties of 0.996 Ba0.85Ca0.15Zr0.1Ti0.9O3-0.004BiYO3 ceramics was studied. The results show that the ceramics have dense microstructure at sintering temperature of 1420 o C, and the electrical properties of the ceramics are as follows: d33130pC / Nkp 18.2 and 蔚 rn 4225tan 未 1.95.2. The effects of La2O3 doping on the phase structure, microstructure and electrical properties of Ba0.85Ca0.15Zr0.1Ti0.9O3-0.8wt.%SiO2 ceramics were investigated. The results show that when the doping amount of La2O3 is 0.4 wt.%, the samples have uniform grain size, low porosity and compact grain structure. And at this time, the ceramic has the best electrical property: D33153pC / N, 蔚 rn 4487tan 未 2.444.3. The effects of SnO2 doping on the phase structure, electrical properties and dielectric relaxation behavior of Ba0.85Ca0.15Zr0.1Ti0.9O3-0.2wt.%CuO2 ceramics were investigated. The results show that when the doping amount of SnO2 is 0.3wt.%, the ceramic has the best electrical properties: D33286pC / NkpN 36.01 and 蔚 rn 3118tan 未 1.64. The dielectric properties of BCZT-Cu-x Sn ceramics were studied. The results showed that the Curie temperature of BCZT-Cu-x Sn ceramics was decreased from 86.1 OC to 67.4 OC, and the dispersion coefficient 纬 was 1.841 after doping with SnO2, which was characterized by typical diffusion phase transition and dielectric relaxation behavior. The effects of Sm2O3 doping on the microstructure, piezoelectric properties, dielectric properties, diffusion phase transition and dielectric relaxation behavior of (Ba0.85Ca0.15) (Zr0.1Ti0.893Mn0.005Y0.002) O3 lead-free piezoelectric ceramics were investigated. The results show that the ceramic has the best comprehensive properties when xG 0.3wt.%, that is, d33171pC / NkpN 20.45545, 蔚 rr5451tan 未 = 2.03. In addition, the dielectric properties of BCZTMY-x Sm ceramics have been studied. The results show that the Curie temperature of BCZTMY-x Sm ceramics decreases with doping of Sm _ 2O _ 3, and the doping of Sm2O3 leads to the disorder of ion arrangement in the small region of the BCZT lattice due to the heterogeneity of the doped elements. There are polar microregions, which show typical diffuse phase transition and dielectric relaxation behavior.
【学位授予单位】：贵州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ174.1
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相关期刊论文 前2条
1 姚喜,陈至立;弛豫型铁电体[J];压电与声光;1984年06期
2 古训玖;江向平;黎强;陈超;李小红;涂娜;;Sr和Mn复合掺杂(Na_(0.8)K_(0.2))_0.5Bi_(0.5)TiO_3无铅压电陶瓷[J];中国陶瓷;2012年08期
，本文编号：2186399
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